Finishing element using finishing aids
OwnerCharles J Molnarinventor
Life of this patent
Estimating the term…
Abstract
A method of using a finishing element having film forming lubricants for finishing semiconductor wafers is described. The lubricants in the finishing element are transferred to operative finishing interface can form lubricating boundary layer. The lubricating boundary layer thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential and/or localized finishing are also discussed.
Claims77
A method of finishing of a semiconductor wafer surface being finished comprising the steps of:
- providing a finishing element having a finishing surface and having an organic boundary lubricant therein which is free of encapsulating films;
- positioning the semiconductor wafer surface being finished proximate to the finishing surface;
- applying an operative finishing motion in an operative finishing interface;
- and wherein
- applying the operative finishing motion transfers the organic boundary lubricant from the finishing surface to the operative finishing interface forming an organic lubricating boundary layer of from 1 to 6 molecules thick.
A method of finishing of a heterogeneous semiconductor wafer surface being finished comprising the steps of:
- a) providing a finishing element having a finishing surface and having a dispersed organic boundary lubricant, the organic boundary lubricant being free of encapsulating films;
- b) positioning the heterogeneous semiconductor wafer surface being finished proximate to the finishing surface;
- c) applying an operative finishing motion between the heterogeneous semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- d) applying the operative finishing motion transfers the organic boundary lubricant from the finishing surface to the operative finishing interface forming an organic lubricating boundary layer of from 1 to 6 molecules thick.
A method of finishing of a heterogeneous semiconductor wafer surface being finished comprising the steps of:
- providing a finishing surface having a plurality of discrete, unconnected organic boundary lubricant regions free of encapsulating film;
- positioning the semiconductor wafer surface being finished proximate to the finishing surface;
- applying an operative finishing motion transfers the organic boundary lubricant from the finishing surface to an operative finishing interface forming a differential organic lubricating boundary layer in the operative finishing interface;
- and
- controlling the lubricating boundary layer film physical form by changing at least one lubrication control parameter in situ based on feedback information from a lubrication control subsystem having an energy change sensor.
A method of finishing of a semiconductor wafer surface being finished having uniform regions and a plurality of wafer die, each wafer die having a repeating pattern of unwanted raised regions, the method comprising the steps of:
- providing a finishing element finishing surface;
- supplying an organic boundary lubricant to the interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- positioning the semiconductor wafer surface being finished proximate to the finishing surface;
- applying an operative finishing motion in an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- applying the operative finishing motion to the operative finishing interface forms an organic lubricating boundary layer of at most 6 molecules thick.
A method of finishing of a semiconductor wafer surface being finished having uniform regions having a plurality of unwanted raised regions, the method comprising the steps of:
- providing a finishing element finishing surface;
- positioning the semiconductor wafer surface being finished proximate to the finishing element finishing surface;
- supplying an organic boundary lubricant to an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- applying an operative finishing motion in the interface between the semiconductor wafer surface being finished;
- and wherein
- applying the operative finishing motion to the operative finishing interface forms an organic lubricating boundary layer having a thickness of at most 10 molecules on at least a portion of the semiconductor surface being finished and:
- the operative finishing motion forms a friction in a interface between a uniform region of the semiconductor wafer surface and the finishing element finishing surface;
- the organic lubricating boundary layer physically or chemically interacts with and adheres to the uniform region of the semiconductor wafer surface;
- the friction formed between the uniform region of the semiconductor wafer surface and the finishing element finishing surface is determined by properties other than viscosity.
A method of finishing of a semiconductor wafer surface being finished having uniform regions and a plurality of wafer die, each wafer die having a repeating pattern of unwanted raised regions, the method comprising the steps of:
- providing a finishing element finishing surface;
- positioning the semiconductor wafer surface being finished proximate to the finishing element finishing surface;
- supplying an organic lubricant to an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- applying an operative finishing motion in an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- applying the operative finishing motion to the operative finishing interface forms an organic lubricating film of at most 6 molecules thick.
A method of finishing of a semiconductor wafer surface being finished having uniform regions having a plurality of unwanted raised regions, the method comprising the steps of:
- providing a finishing element finishing surface;
- positioning the semiconductor wafer surface being finished proximate to the finishing surface;
- supplying an organic lubricant to an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- applying an operative finishing motion in the interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- applying the operative finishing motion to the operative finishing interface forms an organic lubricating film having a thickness of at most 4 molecules on at least a portion of the semiconductor surface being finished and:
- the operative finishing motion forms a friction in the interface between a uniform region of the semiconductor wafer surface being finished and the finishing element finishing surface;
- and
- the organic lubricating film physically or chemically interacts with and adheres to the uniform region of the semiconductor wafer surface being finished.
A method of finishing of a semiconductor wafer having a plurality of metal layers and a semiconductor wafer surface being finished having uniform regions having a plurality of unwanted raised regions, the method comprising the steps of:
- providing a finishing element finishing surface;
- positioning the semiconductor wafer surface being finished proximate to the finishing surface;
- supplying an organic lubricant to an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- applying an operative finishing motion in the interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- applying the operative finishing motion to the operative finishing interface forms an organic lubricating film having a thickness of at most 4 molecules on at least a portion of the semiconductor wafer surface being finished and:
- the operative finishing motion forms a friction in the interface between a uniform region of the semiconductor wafer surface being finished and the finishing element finishing surface;
- and
- the organic lubricating film physically or chemically interacts with and adheres to the uniform region of the semiconductor wafer surface being finished;
- and
- controlling the organic lubricating film thickness on at least a portion of the semiconductor wafer surface being finished changing at least one lubrication control parameter in situ based on feedback information from a control subsystem having an operative friction sensor and wherein the control subsystem updates processing information for a particular metal layer during finishing.
Dependencies are inferred from the claim text.