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US 6,633,497 B2Granted
Resistive cross point array of short-tolerant memory cells
AssigneeHewlett-Packard Development Company, L.P.
InventorJanice H. Nickel
Life of this patent
Estimating the term…
Abstract
A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and electrically conductive hard mask material on the memory element. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.
Claims11
A data storage device comprising a resistive cross point array of memory cells and a plurality of conductors, each memory cell including a memory element and electrically conductive hard mask material between the memory element and one of the conductors.
A memory cell of a data storage device, the memory cell comprising:
- a memory element having a ferromagnetic layer and through-plane resistance;
- and
- an electrically conductive hard mask on a surface of the ferromagnetic layer.
Dependencies are inferred from the claim text.