Dual tunnel junction sensor antiferromagnetic layer between pinned layers
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
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AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
Estimating the term…
A dual tunnel junction sensor operates without the requirement of first and second shield layers. This is accomplished by making first and second free layer structures antiparallel (AP) coupled structures. The first free layer structure has first and second AP coupled layers and the second free layer structure has third and fourth AP coupled layers. The thicknesses of the first and third AP coupled layers, which are preferably equal, are different from the thicknesses of the second and fourth AP coupled layers, which are also preferably equal. Field signals from perpendicular or longitudinally recorded magnetic disks rotate the magnetic moments of the first and second free layer structures so that resistances on each side of a pinning layer are additive. Extraneous field signals, other than signal fields from the rotating magnetic disk, are cancelled by common mode rejection.
A magnetic read head which has an air bearing surface (ABS), comprising:
A magnetic head assembly having an air bearing surface (ABS), comprising:
A magnetic disk drive including at least one magnetic head assembly that has an a write head, a read head and an air bearing surface (ABS) comprising:
A method of making a magnetic read head which has an air bearing surface (ABS), comprising the steps of:
A method of making magnetic head assembly that has an air bearing surface (ABS), comprising the steps of:
Dependencies are inferred from the claim text.