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US 6,633,427 B1Granted
Method of forming photonic crystals using a semiconductor-based fabrication process
AssigneeNational Semiconductor Corporation
InventorWaclaw C. Koscielniak
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Abstract
A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.
Claims13
A method of forming a photonic crystal on a semiconductor substrate, the substrate having a receiving region, the method comprising the steps of:
- forming a first layer of material over the substrate, the first layer of material having a first dielectric constant;
- forming a second layer of material on the first layer of material, the second layer of material having a second dielectric constant;
- repeating the forming the first layer step and the forming the second layer step a predetermined number of times to form a multi-layered structure with alternating layers, the multi-layered structure having a top layer and a plurality of underlying layers, the top layer having a top surface;
- etching the top layer and the underlying layers to form a plurality of photonic stacks and a space between the photonic stacks, the plurality of photonic stacks having a plurality of top surfaces;
- and
- forming a layer of interstack material over the substrate to fill up the space between the photonic stacks.
3 more elements
Dependencies are inferred from the claim text.