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US 6,633,193 B1Granted
Method of forming a switching device and structure therefor
AssigneeWells Fargo Bank Minnesota, National Association, as Collateral Agent
InventorsJosef Halamik, Frantisek Sukup
Life of this patent
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Abstract
A switching device (20) is formed to generate a ramp voltage by using a capacitor (48) formed on the semiconductor die (90) with the switching device (20). The switching device (20) drives a high-power device to conduct load currents for a load. The ramp voltage is used to gradually increase the drive that is applied to the high-power device in order to gradually increase the current conducted by the high-power device.
Claims20
A method of forming a switching device comprising:
- forming a timing section having an output cooperatively coupled to an input of an isolation section by forming the timing section and the isolation section on a semiconductor die;
- forming the timing section to generate a first output voltage having a first waveform varying, responsively to a reset input, from a first voltage value to a second voltage value during a time period and varying to a value greater than the second voltage value after the time period;
- and
- forming the isolation section to cooperatively respond to the first output voltage to generate a second output voltage having a second waveform that varies from a third voltage value to a fourth voltage value during the time period, and formed to decouple the second output voltage from following the first output voltage at an end of the time period wherein the second waveform has a shape during the time period that is approximately equal to a shape of the first waveform.
1 more element
A method of forming a switching device comprising:
- forming a capacitor multiplier circuit on a semiconductor die;
- cooperatively coupling an output of the capacitor multiplier circuit to a control input of an isolation transistor of an isolation circuit;
- and
- forming the isolation circuit to generate an output voltage responsive to the output of the capacitor multiplier circuit during a time period, and to decouple the output of the isolation circuit from variations of the output of the capacitor multiplier circuit after the time period.
1 more element
A switching device structure comprising:
- a capacitor multiplier circuit formed on a semiconductor die, the capacitor multiplier circuit having a first branch and a second branch, and an output;
- an internal voltage node;
- a constant current source coupled in series between the internal voltage node and the first branch of the capacitor multiplier circuit;
- a switch transistor coupled in series between the internal voltage node and the second branch of the capacitor multiplier circuit;
- a voltage reference having an input coupled to the internal voltage node, and an output;
- and
- an isolation transistor having a first current carrying electrode coupled to the output of the voltage reference, a control electrode coupled to the output of the capacitor multiplier circuit, and a second current carrying electrode coupled to a power return.
4 more elements
Dependencies are inferred from the claim text.