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US 6,633,133 B1Granted
Ion source
AssigneeNissin Electric Co., Ltd.
InventorShuya Ishida
Life of this patent
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Abstract
An ion source is furnished with a gas introducing mechanism for introducing an inert gas and an organometallic gas being a raw gas into a plasma production container.
Claims6
An ion source comprising:
- a filament configured for generating thermoelectron;
- and
- a plasma production container, in which the thermoelectron generated from the filament is used to ionize a raw gas containing indium for leading an ion beam containing indium ion;
- wherein the raw gas is one of trimethylindium gas or triethylindium gas, and the filament comprises tantalum, the combination of the raw gas comprising one of trimethylindium gas or triethylindium gas, and the filament comprising tantalum causes the filament to have lifetime greater than a wolfram filament.
1 more element
A method for providing a ion source comprising:
- generating thermoelectron using a filament;
- ionizing a raw gas in a plasma production container using the thermoelectron generated from the filament, the raw gas containing indium for leading an ion beam containing indium ion, the raw gas comprising one of trimethylindium gas or triethylindium gas, and the filament comprising tantalum, the combination of the raw gas comprising one of trimethylindium gas or triethylindium gas, and the filament comprising tantalum causing the filament to have lifetime greater than a wolfram filament.
Dependencies are inferred from the claim text.