Plasma gereration apparatus and method
AssigneeWaferMasters, Inc.
InventorWoo Sik Yoo
Life of this patent
Estimating the term…
Abstract
An apparatus and process for processing a substrate using components and particles formed in a remote plasma generation section of a processing chamber. The processing chamber includes a processing section and a plasma generation section. A plasma field is generated in the plasma generation section, such that the plasma field is generated remotely from the processing section. Components and particles from the plasma field can diffuse and/or drift from the plasma generation section through a passageway to the processing section. The processing chamber may include a plurality of plasma generation sections for generating additional plasma fields. In each instance, the additional plasma fields are generated remotely from the processing section.
Claims14
An apparatus for processing a substrate, comprising:
- a processing chamber including:
- a processing section;
- a first plasma generation section;
- a passageway disposed therebetween, said first plasma generation section for generating a first plasma field remotely from said processing section, said passageway configured to allow particles from said first plasma field to translate from said first plasma generation section to said processing section;
- a second plasma generation section in environmental communication with said first plasma generation section for generating a second plasma field, said passageway configured to allow particles from said second plasma field to translate from said second plasma generation section to said processing section, said first plasma field and said second plasma field generated from different sources.
An apparatus for processing a semiconductor substrate, comprising:
- a processing chamber;
- and
- a first plasma generation chamber for generating a first plasma field;
- and
- a second plasma generation chamber for generating a second plasma field, said first plasma field and said second plasma field having different plasma field components, said first and said second plasma generation chambers configured to allow said first plasma field and said second plasma field to intersect at an area of intersection,
- said processing chamber and said first and second plasma generation chambers including a passageway between them to allow first and second plasma field components to move from said area of intersection to said processing chamber.
A plasma generation process comprising:
- providing a chamber including a first plasma generation section, a second plasma generation section, a processing section and a passageway therebetween;
- generating a first plasma field in said first plasma generation section;
- generating a second plasma field in said second plasma generation section, said first plasma field and said second plasma field generated from different sources, said first and said second plasma fields intersecting at an intersection area;
- and
- moving components of said first and said second plasma fields from said intersection area through said passageway to said processing section.
Dependencies are inferred from the claim text.