Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device, comprising:

• a substrate;
• a first wiring layer;
• a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;
• a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;
• and
• a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,
• wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and
• wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 20 nm is greater than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer;
• a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;
• a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;
• and
• a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,
• wherein said first oxide film is formed on said first wiring layer and said dielectric film is formed on said first layer,
• wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and
• wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer;
• a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;
• a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;
• and
• a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,
• wherein said first oxide film is formed on said first wiring layer and said dielectric film is formed on said first layer,
• wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and
• wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 20 nm is than or equal to 1×1021/cm3.

A semiconductor device having a plurality wiring layers, comprising:

• a first wiring layer;
• a second wiring layer;
• a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a first layer containing nitrogen formed on a side wall of said via hole,
• wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said first layer is formed by doping said side wall of said via hole with NH3 plasma, and
• wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×1021/cm3.

A semiconductor device having a plurality wiring layers, comprising:

• a first wiring layer;
• a second wiring layer;
• a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a first layer containing nitrogen formed on a side wall of said via hole,
• wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said first layer is formed by doping said side wall of said via hole with NH3 plasma, and
• wherein a first nitrogen density of said nitrogen ions from said surface of said first layer to a first depth of 20 nm is greater than or equal to 1×1021/cm3.

A semiconductor device having a plurality wiring layers, comprising:

• a first wiring layer;
• a second wiring layer;
• a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a first layer containing nitrogen formed on a side wall of said via hole,
• wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said first layer is formed by implanting nitrogenous ions into said side wall of said via hole, and
• wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×1021/cm3.

A semiconductor device having a plurality wiring layers, comprising:

• a first wiring layer;
• a second wiring layer;
• a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a first layer containing nitrogen formed on a side wall of said via hole,
• wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said first layer is formed by implanting nitrogenous ions into said side wall of said via hole, and
• wherein a first nitrogen density of said nitrogen ions from said surface of said first layer to a first depth of 20 nm is greater than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer;
• a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;
• a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;
• a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film;
• a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a second layer containing nitrogen formed on a side wall of said via hole,
• wherein said second layer is-formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said second layer is formed by doping said side wall of said via hole with NH3 plasma, and
• wherein a nitrogen density of said nitrogen ions from a surface of said second layer to a depth of 10 nm is greater than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer;
• CD
• a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;
• a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;
• a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film;
• a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a second layer containing nitrogen formed on a side wall of said via hole,
• wherein said second layer is formed by supplying said side wall of said via hole with nitrogen ions,
• wherein said second layer is formed by doping said side wall of said via hole with NH3 plasma, and
• wherein a nitrogen density of said nitrogen ions from a surface of said second layer to a depth of 20 nm is greater than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer formed at least indirectly on said substrate;
• a first oxide film formed on said first wiring layer;
• a dielectric film having a low dielectric constant formed on said first oxide film;
• a first layer containing nitrogen formed in said first oxide film;
• a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a second layer containing nitrogen formed in a side wall of said via hole,
• wherein said first layer is formed by doping said first oxide film with NH3 plasma,
• wherein said second layer is formed by doping said side wall of said via hole with NH3 plasma,
• wherein a first nitrogen density of said nitrogen from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×1021/cm3, and
• wherein a second nitrogen density of said nitrogen from a surface of said second layer to a second depth of 10 nm is greater than or equal to 1×1021/cm3.

A semiconductor device, comprising:

• a substrate;
• a first wiring layer formed at least indirectly on said substrate;
• a first oxide film formed on said first wiring layer;
• a dielectric film having a low dielectric constant formed on said first oxide film;
• a first layer containing nitrogen formed in said first oxide film;
• a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;
• a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer;
• and
• a second layer containing nitrogen formed in a side wall of said via hole,
• wherein said first layer is formed by doping said first oxide film with NH3 plasma,
• wherein said second layer is formed by doping said side wall of said via hole with NH3 plasma,
• wherein a first nitrogen density of said nitrogen from a surface of said first layer to a first depth of 20 nm is greater than or equal to 1×1021/cm3, and
• wherein a second nitrogen density of said nitrogen from a surface of said second layer to a second depth of 20 nm is greater than or equal to 1×1021/cm3.