US 6,633,079 B2 · Wafer level interconnection

Abstract

RF MicroElectroMechanical Systems (MEMS) circuitry (15) on a first high resistivity substrate (17) is combined with circuitry (11) on a second low resistivity substrate (13) by overlapping the first high resistivity substrate (17) and MEMS circuitry (15) with the low resistivity substrate (13) and circuitry (11) with the MEMS circuitry (15) facing the second circuitry (11). A dielectric lid (19) is placed over the MEMS circuitry (15) and between the first substrate (17) and second substrate (13) with an inert gas in a gap (21) over the MEMS circuitry (15). Interconnecting conductors (25,31,35,37,39,41) extend perpendicular and through the high resistivity substrate (17) and through the dielectric lid (19) to make electrical connection with the low resistivity substrate (13).

Claims20

Dependent claims

A semiconductor for coupling a first and a second substrate, the semiconductor comprising:

a first substrate that includes a high resistivity material and that is coupled to a first circuitry;
a second substrate that includes a low resistivity material and that is coupled to a second circuitry;
a dielectric lid positioned between the first and second circuitries and operable to provide a gap between the first and second substrates;
and
a plurality of interconnecting conductors that each extend to the first and second substrates such that an electrical coupling is provided between the first and second circuitries.

2 more elements

Dependencies are inferred from the claim text.

Wafer level interconnection

Life of this patent

Wafer level interconnection

Life of this patent

Abstract

Claims20