Heterojunction bipolar transistor and method for fabricating the same
AssigneeSharp Kabushiki Kaisha
InventorKazuhiko Shirakawa
Life of this patent
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Abstract
A heterojunction bipolar transistor includes an emitter layer, a base layer and a collector layer laminated on a top surface of a semiconductor substrate, and a heat sink layer made of a metal and provided on a rear surface of the substrate. A via hole is cut through the emitter layer, the base layer, the collector layer and the substrate. A surface electrode of the emitter layer and the heat sink layer are connected to each other by a metal wiring line running through within the via hole, which is capable of improving the heat radiation and reducing the emitter inductance.
Claims10
A heterojunction bipolar translator comprising:
- an emitter layer, a base layer and a collector layer laminated on a top surface of a semiconductor substrate;
- and
- a heat sink layer made of a metal and provided on a rear surface of the substrate, wherein
- a via hole is cut through the emitter layer, the base layer, the collector layer and the substrate, and
- a surface electrode of the emitter layer and the heat sink layer are connected to each other by a metal wiring line running through within the via hole,
- wherein the metal wiring line does not form an air bridge between said surface electrode and said via hole.
A heterojunction bipolar transistor comprising:
- a semiconductor substrate;
- a heat sink layer provided on a rear surface of the semiconductor substrate and made of a metal;
- a collector layer provided on a top surface of the semiconductor substrate;
- a base layer provided on the collector layer;
- an emitter layer provided on the base layer;
- a metal wiring line running through within a via hole cut through the emitter layer, the base layer, the collector layer and the substrate;
- and
- an interlayer insulator provided between the metal wiring line and each of side walls of the emitter layer, the base layer and the collector layer, said side walls defining the via hole,
- wherein a surface electrode of the emitter layer and the heat sink layer are connected to each other by the metal wiring line, and
- wherein the metal wiring line does not form an air bridge between said surface electrode and said via hole.
Dependencies are inferred from the claim text.