Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsKazuo Yamazaki, Shinji Kuniyoshi, Kousuke Kusakari, Takenobu Ikeda, Masahiro Tadokoro
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Abstract
To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.
Claims4
A semiconductor integrated circuit device comprising:
- (a) a gate insulating film formed over a main face of a semiconductor substrate;
- and
- (b) a gate electrode formed over the gate insulating film,
- wherein the semiconductor substrate has been subjected to a plasma processing in an atmosphere of a mixed gas of a first gas hardly reactive to Ge and a second gas having a function of etching Si, after forming the gate electrode,
- wherein the gate electrode includes an SiGe layer and a polycrystal silicon layer formed at a layer upward therefrom, and
- wherein a side etching amount at two side faces of the gate electrode is equal to or smaller than 40% of a length in a channel length direction of the polycrystal silicon layer constituting the gate electrode.
A semiconductor integrated circuit device comprising:
- (a) a gate insulating film formed over a main face of a semiconductor substrate;
- and
- (b) a gate electrode formed over the gate insulating film,
- wherein the semiconductor substrate has been subjected to a plasma processing in an atmosphere of a mixed gas of a first gas hardly reactive to Ge and a second gas having a function of etching Si,
- wherein the gate electrode includes an SiGe layer and a polycrystal silicon layer formed at a layer upward therefrom, and
- wherein a length in a channel length direction of the gate electrode at the SiGe layer, is equal to a length in the channel length direction of the polycrystal silicon layer constituting the gate electrode.
A semiconductor integrated circuit device comprising:
- (a) a gate insulating film formed over a main face of a semiconductor substrate;
- and
- (b) a gate electrode formed over the gate insulating film,
- wherein the semiconductor substrate has been subjected to a plasma processing in an atmosphere of a mixed gas of a first gas hardly reactive to Ge and a second gas having a function of etching Si, after forming the gate electrode,
- wherein the gate electrode includes an SiGe layer and a metal layer formed at a layer upward therefrom, and
- wherein a side etching amount at two sides faces of the gate electrode is equal to or smaller than 40% of a length in a channel length direction of the metal layer constituting the gate electrode.
A semiconductor integrated circuit device comprising:
- (a) a gate insulating film formed over a main face of a semiconductor substrate;
- and
- (b) a gate electrode formed over the gate insulating film,
- wherein the semiconductor substrate has been subjected to a plasma processing in an atmosphere of a mixed gas of a first gas hardly reactive to Ge and a second gas having a function of etching Si, after forming the gate electrode, and
- wherein a length in a channel length direction of the gate electrode at an SiGe layer, is equal to a length in the channel length direction of a metal layer constituting the gate electrode.
Dependencies are inferred from the claim text.