Compact SOI body contact link
AssigneeMicron Technology, Inc.
InventorWendell P. Noble
Life of this patent
Estimating the term…
Abstract
A method and structure for a silicon on insulator (SOI) device with a body contact are provided. The body contact is formed by epitaxial growth from a substrate to the body region of the device. The body contact is self-aligned with the gate of the device and is buried within an isolation region outside of the active area of the device. Thus, the body contact does not increase parasitic capacitance in the device, not does the body contact affect device density. No additional metal wiring or contact holes are required.
Claims35
A silicon on insulator (SOI) device on a substrate, comprising:
- a single crystalline semiconductor structure having a first source/drain region, a body region, and a second source/drain region;
- a gate formed on a gate oxide located above the body region;
- an insulator layer separating the single crystalline semiconductor structure from the substrate;
- and
- a body contact wherein the body contact is self-aligned with the gate and physically couples the substrate to at least a part of a side portion of the body region.
A body contacted transistor on an insulator layer, comprising:
- an active region of the transistor, the active region including first source/drain region, a second source/drain region, and a body region;
- a gate located above the body region and between the first and second source/drain region;
- and
- a body contact is physically coupled to a substrate in a portion of a lateral isolation region, and wherein the body contact is coupled to the body region.
A silicon on insulator (SOI) device, comprising:
- a substrate;
- an insulator layer formed on the substrate;
- a planar semiconductor structure having an upper surface and opposing sidewalls, the planar semiconductor structure includes a first source/drain region, a body region, a second source/drain region, and a gate, the planar semiconductor structure is formed on the insulator layer;
- and
- a conductive sidewall member, wherein the conductive sidewall member is self-aligned with the gate and physically couples the substrate to one of the opposing sidewalls.
A silicon on insulator (SOI) device, comprising:
- a substrate;
- an insulator layer formed on the substrate;
- a planar semiconductor structure having an upper surface and opposing sidewalls, the planar semiconductor structure includes a first source/drain region, a body region, a second source/drain region, and a gate, the planar semiconductor structure is formed on the insulator layer;
- and
- a conductive sidewall member, wherein the conductive sidewall member physically couples the substrate to a lower portion of one of the opposing sidewalls.
A silicon on insulator (SOI) device on a substrate, comprising:
- a semiconductor structure having a first source/drain region, a body region, and a second source/drain region;
- a gate formed on a gate oxide located above the body region;
- an insulator layer separating the semiconductor structure from the substrate;
- and
- a body contact wherein the body contact is located beneath a portion of the gate, and is physically coupled to at least a part of a side portion of the body region.
A body contacted transistor on an insulator layer, comprising:
- an active region of the transistor, the active region including a first source/drain region, a second source/drain region, and a body region, wherein substantially all of a bottom portion of the active region is electrically isolated from a substrate;
- a gate located above the body region and between the first and second source/drain region;
- and
- a body contact is coupled to the substrate and the body contact is isolated from the first source/drain region and the second source/drain region.
A silicon on insulator (SOI) device on a substrate, comprising:
- a semiconductor structure having a first source/drain region, a body region, a second source/drain region, and opposing first and second sidewall regions;
- a gate formed on a gate oxide located above the body region;
- an insulator layer electrically insulating an entire bottom surface of the semiconductor structure from the substrate, the insulating layer being aligned with the first opposing sidewall region;
- and
- a body contact coupling the body to the substrate, the body contact being aligned with the first opposing sidewall region and the insulator layer.
Dependencies are inferred from the claim text.