Compensation component with improved robustness

A compensation component, comprising:

• a semiconductor body;
• a first electrode and a second electrode on said semiconductor body;
• a first zone of a first conductivity type formed in said semiconductor body and connected to said first electrode and a zone of a second conductivity type, opposite the first conductivity type, adjoining said first zone;
• a second zone of the first conductivity type connected to said second electrode;
• wherein said zone of the second conductivity type has a first face facing towards said second zone;
• mutually interleaved regions of the first and second conductivity types formed in a region between said first face and a second face formed between said first face and said second zone;
• and
• said mutually interleaved regions of the first and second conductivity types are doped such that a location, induced by the doping, of a maximum field strength of an electrical field, composed of a first field running between said first face and said second face and a second field oriented perpendicular thereto, is displaced, solely by varying the second field while keeping the first field constant, into a plane defined substantially centrally between, and parallel to, said first and second faces.