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US 6,633,062 B2Granted
Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsKim Min-Soo, Lim Chan
Life of this patent
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Abstract
A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta2O5 films formed on the lower electrodes, composite films formed on the Ta2O5 films and upper electrodes formed on the composite films.
Claims6
A semiconductor device for use in a memory cell comprising:
- an active matrix including a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors;
- at least one lower electrode formed on top of the conductive plugs;
- at least one Ta2O5 film formed on the lower electrodes;
- at least one Si3N4 film formed between the at least one lower electrode and the at least one Ta2O5 film;
- at least one Ta2xAl2(1-x)Oy composite film formed on the at least one Ta2O5 film, x and y representing mole %;
- and
- at least one upper electrode formed on the at least one Ta2xAl2(1-x)Oy composite film.
4 more elements
Dependencies are inferred from the claim text.