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US 6,633,061 B2Granted
SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method
AssigneeInfineon Technologies AG
InventorsJörn Lützen, Bernhard Sell
Life of this patent
Estimating the term…
Abstract
In a SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method, a multilayer barrier layer with a potential barrier and a diffusion barrier is used to reliably prevent diffusion of impurities between element layers. This allows semiconductor circuits to be produced with smaller structure sizes and with a higher integration density.
Claims9
A semiconductor circuit, comprising:
- a SOI substrate, including:
- a first element layer,
- at least one second element layer, and
- at least one isolation layer located between said first element layer and said second element layer, said isolation layer including a diffusion barrier and a multilayer barrier layer with a potential barrier;
- at least one first semiconductor element that is formed in said first element layer;
- at least one second semiconductor element that is formed in said at least second element layer;
- and
- a conductive diffusion barrier layer electrically connecting said first semiconductor element and said second semiconductor elements.
5 more elements
A DRAM memory cell, comprising:
- a SOI substrate, including:
- a first element layer,
- at least one second element layer, and
- at least one isolation layer located between said first element layer and said second element layer, said isolation layer including a diffusion barrier and a multilayer barrier layer with a potential barrier;
- at least one first semiconductor element that is formed in said first element layer;
- at least one second semiconductor element that is formed in said at least second element layer;
- and
- a conductive diffusion barrier layer electrically connecting said first semiconductor element and said second semiconductor elements;
- said first semiconductor element including a selection transistor;
- and
- said second semiconductor element including a trench capacitor.
8 more elements
Dependencies are inferred from the claim text.