Method of fabricating a semiconductor light-emitting device and the semiconductor light-emitting device

A semiconductor light-emitting device having on a substrate a semiconductor light-emitting element comprising:

• a multi-layered film pattern composed of a lower clad layer, an active layer and an upper clad layer of a conduction type different from that of said lower clad layer, wherein said layers are stacked in this order;
• and
• a stripe of a current injection layer provided on said multi-layered film pattern so as to extend over both edges of said multi-layered film pattern;
• wherein,
• said active layer is formed so that both end portions thereof along the longitudinal direction of said current injection layer is thinner than the central portion;
• and
• said active layer at the central portion is thicker over an entire upper surface of the lower clad layer in a traverse direction with respect to the longitudinal direction of the current injection layer;
• wherein the surface level of said substrate underneath said multi-layered film pattern is formed lower in the central portion than in both edge portions along the longitudinal direction of said current injection layer.