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US 6,633,047 B2Granted
Apparatus and method for introducing impurity
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasahiko Niwayama, Hiroko Kubo, Kenji Yoneda
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Abstract
An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.
Claims6
An apparatus for introducing an impurity comprising:
- means for introducing impurity ions having charges into a target to be processed, the target is composed of a film provided on an insulating film with a thickness of t(nm) and the insulating film is formed on a substrate;
- means for supplying electrons into the target, the electrons canceling the charges of the impurity ions;
- and
- means for controlling the maximum energy value of the electrons supplied by the electron supply means at 2 t(eV) or less.
1 more element
Dependencies are inferred from the claim text.