Polymer-containing photoresist, and process for manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin Ho Jung, Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik
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Abstract
The present invention relates to a semiconductor device using a copolymer-containing photoresist, and a process for manufacturing the same. As a norbornene derivative (monomer) having a hydrophilic group is synthesized and introduced to the backbone chain of a polymer, the polymer according to the present invention has excellent etching resistance and heat resistance, which are the characteristic points of alicyclic olefin structure, and provide excellent resolution due to prominent enhancement of adhesiveness resulted from introducing a hydrophilic group (—OH).
Claims7
A process for preparing a photoresist polymer of the formula:
- wherein
- R′ and R″ independently represent hydrogen, or an optionally substituted linear or branched C1-C4 alkyl group;
- R1 and R2 independently represent hydrogen, or linear or branched alkyl, cycloalkyl, alkoxyalkyl or cycloalkoxyalkyl, each optionally substituted and having upto 10 carbon atoms;
- m is an integer of 1 to 8;
- the molar ratio of w and x are independently 0.005-0.9;
- and
- the molar ratio of y and z are independently 0.001-0.9, said method comprising polymerizing an admixture comprising:
- a first norbornene derivative of the formula:
- a second norbornene derivative of the formula:
- a third norbornene derivative of the formula:
- maleic anhydride;
- and
- a polymerization initiator, under conditions sufficient to produce the photoresist polymer.
Dependencies are inferred from the claim text.