Manufacturing method of semiconductor integrated circuit device
AssigneesHitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
InventorsHidenori Sato, Yoshiyuki Hayashi, Toshio Ando
Life of this patent
Estimating the term…
Abstract
Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.
Claims10
A manufacturing method of a semiconductor integrated circuit device comprising feeding a source gas containing a monosilane gas and an ammonia gas to the vicinity of a main surface of a semiconductor wafer heated to a temperature not less than a thermal decomposition temperature of said monosilane gas and said ammonia gas in a cold-wall thermal CVD reactor, and decomposing said monosilane gas and said ammonia gas in the vicinity of the main surface of said semiconductor wafer, thereby depositing a silicon nitride film over the main surface of said semiconductor wafer placed in a gas atmosphere containing said monosilane gas and said ammonia gas,
- wherein a flow rate ratio of said ammonia gas to said monosilane gas is within a range of 150 to 750 and a pressure of said gas atmosphere is within a range of 37 kPa to 50 kPa.
Dependencies are inferred from the claim text.