Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device
AssigneesSeiko Epson Corporation, Mitsubishi Denki Kabushiki Kaisya
InventorsMitsutoshi Miyasaka, Takao Sakamoto
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Abstract
The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.
Claims30
A method for forming a silicon oxide film, comprising:
- forming a silicon oxide film on the base member;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein a thickness of the silicon oxide is t (cm) and an absorption coefficient of the infrared light by the silicon oxide film is k (cm1), and
- wherein the film thickness t and the absorption coefficient k satisfy:
- t×k0.01, and
- an increase of temperature in the silicon oxide film is larger than that in the base member during the irradiation the infrared light irradiating the base member after being partly absorbed by the silicon oxide film.
A method for manufacturing a semiconductor device, comprising:
- providing a base member including a silicon;
- oxidizing the silicon to form a silicon oxide film;
- irradiating infrared light onto the silicon oxide film,
- wherein a thickness of the silicon oxide is t (cm) and an absorption coefficient of the infrared light by the silicon oxide film is k (cm1), and
- wherein the film thickness t and the absorption coefficient k satisfy:
- t×k>0.01, and
- an increase of temperature in the silicon oxide film is larger than that in the base member during the irradiation the infrared light irradiating the base member after being partly absorbed by the silicon oxide film.
An apparatus for irradiating an infrared light, comprising:
- an infrared light generating mechanism that generates infrared light;
- a scanning mechanism that varies a relative positional relation between the substrate and the leveled infrared light,
- wherein the mechanisms are composed so as to be able to irradiate the infrared light towards a silicon oxide film such that the infrared light irradiates the silicon oxide film before irradiating the substrate, and
- wherein the infrared light generating mechanism is capable of generating the infrared light having a wavelength between 8.9 μm and 10.0 μm.
A method for manufacturing a silicon oxide film comprising:
- forming a silicon oxide film on a substrate;
- and
- irradiating light onto the silicon oxide film;
- the step of irradiating light is carried out under the condition where:
- τ>exp (−0.04605·Tox+34.539)
- where a silicon oxide film temperature at 800° C. or above due to temperature rise in the step of irradiating light is Tox(° C.) and total time at the temperature (Tox) is τ(s), and
- an increase of temperature in the silicon oxide film is larger than that in the substrate during the irradiation the infrared light irradiating the base member after being partly absorbed by the silicon oxide film.
A method for manufacturing a silicon oxide film comprising:
- forming a silicon oxide film on a semiconductor material;
- and
- irradiating light on the silicon oxide film,
- the step of irradiating light being carried out under the condition where:
- τ>2·(1+ν)·η0·exp(ε/k·(Tox+273.15))/E
- where
- ν is Poisson's ratio of an oxide film;
- E is the Young's modulus thereof;
- η is the viscosity thereof;
- η0 is the pre-exponential factor of viscosity;
- ε is activation energy of viscosity;
- and
- k is Boltzmann's constant, respectively, and where a silicon oxide film temperature at 1,000° C. or above due to temperature rise in the step of irradiating light is Tox (° C.) and total time at the temperature (Tox) is τ (s), and an increase of temperature in the silicon oxide film is larger than that in the semiconductor material during the irradiation the infrared light irradiating the base member after being partly absorbed by the silicon oxide film.
Dependencies are inferred from the claim text.