US 6,632,744 B2Granted

Manufacturing method of semiconductor integrated circuit device

AssigneeHitachi, Ltd.

InventorsAkira Imai, Katsuya Hayano, Norio Hasegawa

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Abstract

Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern 28B has a main light transferring pattern 26c1, a plurality of auxiliary light transferring patterns 26c2 disposed thereabout, and a phase shifter S disposed in the main light transferring pattern 26c1. The auxiliary light transferring patterns 26c2 are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern 26c1 are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin.

Claims42

Dependent claims

A manufacturing method of a semiconductor integrated circuit device comprising the steps of:

(a) depositing a positive type photoresist film on a semiconductor substrate;
(b) exposing a first mask pattern on said positive type photoresist film;
(c) exposing a second mask pattern on said positive type photoresist film so as to be superposed on said first mask pattern;
(d) performing development treatment relative to said positive type resist film after said steps (b) and (c) and thereby forming a photoresist pattern comprising a positive type photoresist pattern on said semiconductor substrate;
and
(e) performing etching treatment relative to said semiconductor substrate by using said photoresist pattern as a mask and thereby transferring a transferred pattern on said semiconductor substrate,
wherein said first mask pattern has a pattern for transferring a line pattern;
and
wherein said second mask pattern has a plurality of unit cells arranged regularly;
and
wherein said second mask pattern has:
a plurality of main light transferring patterns for separating said line pattern;
a plurality of auxiliary light transferring patterns disposed such that a distance between each of said main light transferring patterns and each of said auxiliary light transferring patterns becomes the same in a periphery thereof, and formed at such a dimension as not to be transferred on said positive type photoresist film;
and
a phase shifter disposed in any one of said main light transferring patterns and said auxiliary light transferring patterns and generating a phase difference in a transferring light.

12 more elements

A manufacturing method of a semiconductor integrated circuit device comprising the steps of:

(a) depositing a positive type photoresist film on a semiconductor substrate;
(b) exposing a first mask pattern on said positive type photoresist film;
(c) exposing a second mask pattern on said positive type photoresist film so as to be superposed on said first mask pattern;
(d) performing development treatment relative to said positive type resist film after said steps (b) and (c) and thereby forming a photoresist pattern comprising a positive type photoresist pattern on said semiconductor substrate;
and
(e) performing etching treatment relative to said semiconductor substrate by using said photoresist pattern as a mask and thereby transferring a transferred pattern on said semiconductor substrate,
wherein said first mask pattern has a pattern for transferring a line pattern;
wherein said second mask pattern has a plurality of unit cells arranged regularly;
and
wherein each of said plurality of unit cells arranged regularly has:
two main light transferring patterns whose centers are disposed on an axis extending in a first direction;
two main light transferring patterns whose centers are disposed on an axis extending in a second direction intersecting vertically relative to said first direction;
two auxiliary light transferring patterns which are disposed on the axis extending in said first direction and are not disposed on the axis extending in said second direction and being regarded as a center line;
and
a phase shifter disposed in any one of said main light transferring pattern and said auxiliary light transferring pattern and generating a phase difference in a transmission light.

12 more elements

A manufacturing method of a semiconductor integrated circuit device comprising the steps of:

(a) depositing a positive type photoresist film on a semiconductor substrate;
(b) exposing a first mask pattern on said positive type photoresist film;
(c) exposing a second mask pattern on said positive type photoresist film so as to be superposed on said first mask pattern;
(d) performing development treatment relative to said positive type resist film after said steps (b) and (c) and thereby forming a photoresist pattern comprising a positive type photoresist pattern on said semiconductor substrate;
and
(e) performing etching treatment relative to said semiconductor substrate by using said photoresist pattern as a mask and thereby transferring a hole pattern on an insulative film of said semiconductor substrate,
wherein said first mask pattern has a pattern for transferring a first hole pattern of said hole pattern;
and
wherein said second mask pattern has:
a plurality of main light transferring patterns for transferring a second hole pattern of said hole pattern;
a plurality of auxiliary light transferring patterns disposed such that a distance between each of said main light transferring patterns and each of said auxiliary light transferring patterns becomes the same in a periphery thereof, and formed at such a dimension as not to be transferred on said positive type photoresist film;
and
a phase shifter disposed in any one of said main light transferring patterns and said auxiliary light transferring patterns and generating a phase difference in a transferring light.

10 more elements

A manufacturing method of a semiconductor integrated circuit device comprising the steps of:

(a) depositing a positive type photoresist film on a semiconductor substrate;
(b) exposing a first mask pattern on said positive type photoresist film;
(c) exposing a second mask pattern on said positive type photoresist film so as to be superposed on said first mask pattern;
(d) performing development treatment relative to said positive type resist film after said steps (b) and (c) and thereby forming a photoresist pattern comprising a positive type photoresist pattern on said semiconductor substrate;
and
(e) performing etching treatment relative to said semiconductor substrate by using said photoresist pattern as a mask and thereby transferring a transferred pattern on said semiconductor substrate,
wherein said first mask pattern has a pattern for transferring a line pattern;
wherein said second mask pattern has a plurality of unit cells arranged regularly;
and
wherein each of said plurality of unit cells has:
two main light transferring patterns each of which is a pattern transferring a second hole pattern of said hole pattern and whose centers are disposed on an axis extending in a first direction;
two main light transferring patterns each of which is a pattern transferring the second hole pattern of said hole pattern and whose centers are disposed on an axis extending in a second direction intersecting vertically relative to said first direction;
two auxiliary light transferring patterns which are disposed on the axis extending in said first direction and are not disposed on the axis extending in said second direction and are symmetrically disposed relative to the axis extending in said second direction and being regarded as a center line;
and
a phase shifter disposed in any one of said main light transferring pattern and said auxiliary light transferring pattern and generating a phase difference in a transmission light.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/903,580Filed 13 Jul 2001
Priority: JP 2000-21509314 Jul 2000
Published: US 2002/0006734 A117 Jan 2002
Granted: 14 Oct 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

G03F 7/70283
Mask projection systems: mask effects on the imaging process
G03F 1/70
Preparation processes not covered by groups G03F1/20 - G03F1/50: adapting basic layout or design of masks to lithographic process requirements,…
G03F 7/203
Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal;…:…
G03F 7/70466
Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating…