Method of depositing low dielectric constant carbon doped silicon oxide

A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:

• positioning a substrate in a deposition chamber;
• providing a gas mixture to the deposition chamber, wherein the gas mixture comprises methoxysilane (SiCH6O) and an oxidizing gas;
• applying an electric field to the gas mixture in the deposition chamber to form a carbon-doped silicon oxide layer on the substrate wherein the carbon content of the carbon-doped silicon oxide layer is less than about 10%;
• and
• annealing the carbon-doped silicon oxide layer in an atmosphere comprising one or more gases selected from the group of nitrogen (N2), hydrogen (H2), and oxygen (O2).

A method of forming a device, comprising:

• providing a substrate having conductive features formed thereon;
• forming a a carbon-doped silicon oxide layer on the substrate wherein the carbon content of the carbon-doped silicon oxide layer is less than about 10%, and wherein the carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising methoxysilane (SiCH6O) and an oxidizing gas;
• and
• annealing the carbon-doped silicon oxide layer in an atmosphere comprising one or more gases selected from the group of nitrogen (N2), hydrogen (H2), and oxygen (O2).

A method of fabricating a damascene structure, comprising

• forming a first dielectric layer on a substrate;
• forming a a carbon-doped silicon oxide layer on the substrate wherein the carbon content of the carbon-doped silicon oxide layer is less than about 10%, wherein the carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising methoxysilane (SiCH6O) and an oxidizing gas;
• annealing the carbon-doped silicon oxide layer in an atmosphere comprising one or more gases selected from the group of nitrogen (N2), hydrogen (H2), and oxygen (O2);
• patterning the carbon-doped silicon oxide layer to define contacts/vias therethrough;
• forming a second dielectric layer on the patterned carbon-doped silicon oxide layer;
• patterning the second dielectric layer to define interconnects therethrough, wherein the interconnects are positioned over the contacts/vias defined in the carbon-doped silicon oxide layer;
• etching the first dielectric layer to form contacts/vias therethrough;
• and
• filling the contacts/vias and the interconnects with a conductive material.