Film formation method and film formation apparatus
AssigneeApplied Materials, Inc.
InventorsMichio Aruga, Atsushi Tabata
Life of this patent
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Abstract
To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O2 gas and SiH4 gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O2 gas and the SiH4 gas are kept introduced into the processing chamber. After that, the introduction of the SiH4 gas is stopped, and the introduction of the O2 gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.
Claims18
A method of forming an insulating film on a surface of a substrate supported on a support member in a processing chamber, comprising:
- generating a plasma in the processing chamber by applying RF power from a first RF generator;
- forming a film on the substrate, while a film formation gas is introduced into the processing chamber, by applying bias RF power from a second RF generator to the support member;
- and
- stopping the application of the bias RF power to the support member while the film formation gas is kept introduced into the processing chamber, and completing the film formation on the substrate by stopping the introduction of the film formation gas thereafter.
An apparatus for forming an insulating film on a surface of a substrate supported on a support member in a processing chamber, comprising:
- plasma generating means for generating a plasma in said processing chamber by applying RF power from a first RF generator;
- plasma permeation means for making the plasma generated by said plasma generating means permeate the substrate by applying bias RF power from a second RF generator to said support member;
- gas introducing means for introducing the film formation gas into said processing chamber;
- and
- control means for controlling said plasma permeation means to stop the application of the bias RF power to said support member while the film formation gas is kept introduced into said processing chamber, and controlling said gas introducing means to stop the introduction of the film formation gas thereafter.
A method of forming an insulating film on a surface of a substrate supported on a support member in a processing chamber, comprising:
- applying a bias RF power to the support member while a plasma is generated in the processing chamber and a film formation gas containing a silicon-containing gas and an oxidizing gas is introduced into the processing chamber;
- and
- stopping the application of the bias RF power to the support member while the formation gas is continued to be introduced into the processing chamber;
- wherein after the application of the bias RF power to the support member is stopped, the introduction of the silicon-containing gas into the processing chamber is stopped, and subsequently the introduction of the oxidizing gas into the processing chamber is stopped.
An apparatus for forming an insulating film on the surface of a substrate supported on a support member in a processing chamber, comprising:
- means for generating a plasma in said processing chamber;
- means for making the plasma permeate the substrate by applying a bias RF power to said support member;
- means for introducing a silicon-containing gas into the processing chamber;
- means for introducing an oxidizing gas into the processing chamber;
- and
- means for controlling the RF bias, the silicon-containing gas, and the oxidizing gas, wherein said means for controlling sequentially stops the application of the bias RF power to said support member, stops the introduction of the silicon-containing gas into said processing chamber, and then stops the introduction of the oxidizing gas into said processing chamber.
Dependencies are inferred from the claim text.