Method for forming semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorAkira Takahashi
Life of this patent
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Abstract
In a method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via a plug. As a result, a contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer of the structure. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can thus be implanted to the surface of the substrate via the contact hole for substrate-biasing. The contact hole for substrate-biasing can be formed without causing an opening fault.
Claims15
A method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the method comprising:
- providing an insulating layer on the substrate;
- forming a silicon layer on the insulating layer;
- forming a first conductive contact layer extending through the silicon layer and the insulating layer, the first conductive contact layer being electrically connected to the substrate;
- forming an isolating layer on the first conductive contact layer;
- forming an interlayer-insulating layer overlaying the silicon layer and the isolating layer;
- forming a through-hole in the interlayer-insulating layer and in the isolating layer, to expose the first conductive contact layer;
- and
- filling the through-hole with a second conductive contact layer.
A method of forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the method comprising:
- providing an insulating layer on the substrate;
- forming a silicon layer on the insulating layer;
- forming a first through-hole in the silicon layer and the insulating layer to expose the substrate;
- forming a first conductive contact layer in the first through-hole that electrically contacts the substrate and that extends only through the insulating layer;
- forming an isolating layer on the first conductive contact layer within the first through-hole;
- forming an interlayer insulating layer overlaying the silicon layer and the isolating layer;
- forming a second through-hole in the interlayer insulating layer and the isolating layer to expose the first conductive contact layer;
- and
- forming a second conductive contact layer in the second through-hole.
Dependencies are inferred from the claim text.