Electronic device manufacture
AssigneeKoninklijke Philips Electronics N.V.
InventorsJohn R. A. Ayres, Stanley D. Brotherton, Carole A. Fisher, Frnak W. Rohlfing, Nigel D. Young
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Abstract
A method of fabricating an electronic device comprising a thin-film transistor, which addresses a problem of increased off-state current and reduced carrier mobility in self-aligned thin-film transistors. According to the method, a gate layer (2,46) is etched back underneath a mask layer (20,48). Following an implantation step using the mask layer as an implantation mask, the etch-back exposes implant damage which is then annealed by an energy beam (42).
Claims20
A method of fabricating an electronic device comprising an thin-film transistor, comprising the steps of:
- (a) depositing a gate layer over an insulating film, which is over a semiconductor film;
- (b) defining a patterned mask layer over the gate layer;
- (c) etching to pattern a predetermined distance of the gate layer using the mask layer;
- (d) implanting the semiconductor film, using the mask layer and/or the gate layer as an implantation mask to generate a source region and a drain region, and at least a first doped sub-region which is overlapped by the gate layer and an offset sub-region;
- (e) over-etching of the gate layer beyond the predetermined distance ranging between about 0.3 um and 3 um to provide an unimplanted gap;
- (f) removing the mask layer;
- and
- (g) annealing the semiconductor film with an energy beam.
A method of fabricating an electronic device comprising a thin-film transistor, comprising the steps of;
- (a) depositing a gate layer over an insulating film, which is over a semiconductor film;
- (b) defining a patterned mask layer over the gate layer;
- (c) etching to pattern by a predetermined distance the gate layer using the mask layer;
- (d) over-etching back of the gate layer beyond the predetermined distance ranging between about 0.3 um and 3 um to provide an unimplanted gap under the mask layer;
- (e) implanting the semiconductor film, using the mask layer and/or the gate layer as an implantation mask to generate a source reunion and a drain region, and at least a first doped sub-region which is overlapped by the gate layer and an offset sub-region;
- (f) removing the mask layer;
- and
- (g) annealing the semiconductor film with an energy beam.
Dependencies are inferred from the claim text.