Semiconductor device and method of manufacturing the same
AssigneesSemiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
InventorsMitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
Life of this patent
Estimating the term…
Abstract
To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
Claims16
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6 by continuously altering a gas flow rate.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7 by continuously altering a gas flow rate.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6 by continuously altering a gas ratio.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride film undergoes a continuous change within a range of 0.1 to 1.7 by continuously altering a gas ratio.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6 by continuously altering an RF output.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7 by continuously altering an RF output.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6, and
- wherein said silicon nitride oxide film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7, and
- wherein said silicon nitride oxide film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating film formed over a substrate;
- forming a silicon nitride oxide film formed over said insulating film;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6, and
- wherein said silicon nitride oxide film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating film formed over a substrate;
- forming a silicon nitride oxide film formed over said insulating film;
- and
- forming a semiconductor film formed over said silicon nitride oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7, and
- wherein said silicon nitride oxide film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of;
- forming a silicon nitride oxide film formed over a substrate;
- forming an insulating film formed over said silicon nitride oxide film;
- and
- forming a semiconductor film formed over said insulating film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6, and
- wherein said silicon nitride oxide film, said insulating film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a silicon nitride oxide film formed over a substrate;
- forming an insulating film formed over said silicon nitride oxide film;
- and
- forming a semiconductor film formed in contact with said insulating film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7, and
- wherein said silicon nitride oxide film, said insulating film and said semiconductor film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film formed over a substrate;
- forming a silicon nitride oxide film formed over said first insulating film;
- and
- forming a second insulating film formed over said silicon nitride oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6, and
- wherein said silicon nitride oxide film and said second insulating film are formed consecutively in a same chamber.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating film formed over a substrate;
- forming a silicon nitride oxide film formed over said first insulating film;
- forming a second insulating film formed over said silicon nitride oxide film;
- and
- forming a semiconductor film formed over said second insulating film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7, and
- wherein said silicon nitride oxide film, said second insulating film and said semiconductor film are formed consecutively in a same chamber.
Dependencies are inferred from the claim text.