Method to form a color image sensor cell while protecting the bonding pad structure from damage

A method to form color image sensor cells without damaging bonding pads in the manufacture of an integrated circuit device comprising

• forming cell electrodes and bonding pads on a semiconductor substrate wherein said bonding pad structures contain aluminum;
• forming a passivation layer overlying said cell electrodes but exposing the top surface of said bonding pads;
• dipping said semiconductor substrate in a hydrogen peroxide solution to thereby form an aluminum oxide layer overlying said bonding pads;
• depositing a first transparent planarization layer overlying said passivation layer and said aluminum oxide layer;
• depositing color filter photoresist layer overlying said first transparent planarization layer;
• patterning said color filter photoresist layer to form color filter elements wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• depositing a second transparent planarization layer overlying said color filter elements and said first transparent planarization layer;
• patterning said second transparent planarization layer and said first transparent planarization layer to form bonding pad openings that expose said bonding pads wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• depositing a microlens layer overlying said second transparent planarization layer;
• patterning said microlens layer to form microlens elements wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• and
• baking said microlens elements to round said microlens elements to complete said color image sensor cells in the manufacture of the integrated circuit device.

A method to form color image sensor cells without damaging bonding pads in the manufacture of an integrated circuit device comprising:

• forming cell electrodes and bonding pads on a semiconductor substrate wherein said bonding pad structures contain aluminum;
• forming a passivation layer overlying said cell electrodes but exposing the top surface of said bonding pads;
• dipping said semiconductor substrate in a hydrogen peroxide solution to thereby form an aluminum oxide layer overlying said bonding pads wherein said hydrogen peroxide solution comprises a solution of hydrogen peroxide and water with a concentration of between about 1:10 and 1:12;
• depositing a first transparent planarization layer overlying said passivation layer and said metal oxide layer;
• depositing color filter photoresist layer overlying said first transparent planarization layer;
• patterning said color filter photoresist layer to form color filter elements wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• depositing a second transparent planarization layer overlying said color filter elements and said first transparent planarization layer;
• patterning said second transparent planarization layer and said first transparent planarization layer to form bonding pad openings that expose said bonding pads wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• depositing a microlens layer overlying said second transparent planarization layer;
• patterning said microlens layer to form microlens elements wherein the presence of said aluminum oxide layer prevents damage to said bonding pads from an alkaline developer;
• and
• baking said microlens elements to round said microlens elements to complete said color image sensor cells in the manufacture of the integrated circuit device.