Process for making a color selective Si detector array
AssigneeForschungszentrum Julich GmbH
InventorsMichel Marso, Michael Krüger, Michael Berger, Markus Thönissen, Hans Lüth
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Abstract
A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation utilizing transistor characteristics of the respective transistor. The result can provide red, blue and green filters in a color camera.
Claims8
A process for producing a multiplicity of transistors having upper most layers forming collectors which comprises transforming upper most layers by anodic etching at least partly to porous silicon and supplying each individual transistor with a respective etching current for imparting an individual optical characteristic thereto.
A process for producing a multiplicity of electric components, comprising the steps of:
- forming a layer sequence having transistor functions selected from npn transistor, heterobipolar transistor, pnp transistor and photodetector functions and thereby forming an upper silicon layer;
- anodically etching said upper layer to render the same porous;
- and
- biasing transistor connections of said functions so that individual transistors are supplied with respective selected etching currents for forming desired filtering functions thereof.
Dependencies are inferred from the claim text.