Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters

A method of making a double heterojunction light emitting semiconductor device comprising the steps of:

• providing a first cladding layer of a first-doping selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond;
• said first cladding layer having an outer surface and a first generally flat surface;
• growing a semiconductor layer of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C—SiC, and hexagonal SiC, on said first generally flat surface to a thickness that is no greater than about 250 Angstroms;
• patterning said grown semiconductor layer to form a plurality of quantum dots therein whose top surfaces define a second generally flat surface that is spaced from and generally parallel to said first generally flat surface;
• processing said second generally flat surface to produce surface-characteristics that are compatible with direct-wafer-bonding;
• providing a second cladding layer having a second-doping selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond;
• said second cladding layer having an outer surface and having a third generally flat surface;
• processing said third generally flat surface to produce a surface-characteristic that is compatible with direct-wafer-bonding;
• direct-wafer-bonding said second generally flat surface to said third generally flat surface;
• providing a first metal contact on said outer surface of said first cladding layer;
• and
• providing a second metal contact on said outer surface of said second cladding layer.

A method of making a double heterojunction light emitting semiconductor device comprising the steps of:

• providing a first cladding layer having a first-doping and selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond;
• said first cladding layer having an outer surface and a generally flat surface;
• providing a light-emitting semiconductor layer having a thickness that is no greater than about 250 Angstroms, having a first surface, and having a second surface;
• said light-emitting layer being formed of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C—SiC, and hexagonal SiC;
• direct-wafer-bonding said first surface of said light-emitting semiconductor layer to said generally flat surface of said first cladding layer;
• patterning said light-emitting semiconductor to form a plurality of quantum dots therein;
• providing a second cladding layer having a second-doping and selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond;
• said second cladding layer having an outer surface and having a generally flat surface;
• direct-wafer-bonding said generally flat surface of said second cladding layer to said second surface of said light-emitting semiconductor layer;
• providing a first metal contact on said outer surface of said first cladding layer;
• and
• providing a second metal contact on said outer surface of said second cladding layer.