Method for processing semiconductor wafers in an enclosure with a treated interior surface
AssigneeMotorola, Inc.
InventorsRichard E. Martin, Dean J. Denning
Life of this patent
Estimating the term…
Abstract
A process for manufacturing semiconductors uses an enclosure (22) having an interior surface-that is intentionally-roughened by spraying quartz (44) onto the interior surface. The sprayed quartz (44) creates additional surface area for the purpose of trapping or capturing etched material in the enclosure during the process. The roughness of the interior surface is not significantly reduced during the semiconductor processing so that only chemical cleaning is required to maintain the interior surface for long-term use.
Claims28
A method for processing a semiconductor wafer, comprising:
- providing an enclosure having an interior surface of quartz;
- spraying quartz on the interior surface;
- inserting the semiconductor wafer in the enclosure adjacent a baffle having a roughened surface;
- and
- processing the semiconductor wafer in the enclosure.
A method for processing a semiconductor wafer, comprising:
- providing an enclosure of quartz-like material having an interior surface, a sprayed quartz layer of coating material on the interior surface that adheres to the quartz-like material, and a surface roughness of at least about 500 nanometers RMS;
- inserting the semiconductor wafer in the enclosure;
- and
- processing the semiconductor wafer in the enclosure.
A method, comprising:
- providing a glass enclosure having an interior surface;
- spraying quartz onto the interior surface to achieve a surface roughness of at least about 500 nanometers RMS;
- inserting a first baffle into the glass enclosure, the first baffle having a first quartz surface with a roughness of at least about 500 nanometers RMS;
- placing a first plurality of wafers on a quartz wafer holding boat, the quartz wafer holding boat having a second quartz surface with a roughness of at least about 500 nanometers RMS;
- inserting the quartz boat into the glass enclosure and processing the first plurality of wafers and depositing a first layer of material on the quartz during processing of the first plurality of wafers;
- removing the first layer of material from the quartz without removing the quartz;
- inserting and processing a second plurality of wafers and depositing a second layer of material on the quartz during processing of the second plurality of wafers;
- and
- removing the second layer of material from the quartz without removing the quartz.
A method, comprising:
- providing an enclosure having an interior surface;
- spraying quartz on the interior surface of the enclosure to have a surface roughness of at least about 500 nanometers RMS;
- providing a quartz baffle;
- providing a quartz wafer holding boat;
- spraying quartz on the quartz wafer holding boat;
- placing a wafer in the quartz wafer holding boat;
- inserting the quartz wafer holding boat into the enclosure;
- inserting the quartz baffle into the enclosure at one end of the quartz wafer holding boat;
- and
- processing the wafer in the enclosure.
A method for processing a semiconductor wafer, comprising:
- providing an enclosure having an interior surface;
- spraying quartz on the interior surface of the enclosure;
- providing a quartz baffle having an exterior surface that has a surface roughness of at least about 500 nanometers RMS;
- inserting the semiconductor wafer and the quartz baffle in the enclosure;
- and
- processing the semiconductor wafer in the enclosure.
Dependencies are inferred from the claim text.