Back to results
US 6,632,686 B1Granted
Silicon on insulator device design having improved floating body effect
AssigneeIntel Corporation
InventorsAli Keshavarzi, Siva G. Narendra, James W. Tschanz, Vivek K. De
Life of this patent
Estimating the term…
Abstract
A method is provided for designing an electronic device. This may include determining a capacitance ratio of a design of the electronic device and altering the design so as to increase the capacitance ratio of said electronic device. The capacitance ratio may be Cdj/(Cdj+Csj+CBOX), where Cdj is a capacitance of a drain-body junction, Csj is a capacitance of a source-body junction and CBOX is a capacitance of a buried oxide layer.
Claims26
A method comprising:
- determining a capacitance ratio of a design of an integrated circuit, wherein said integrated circuit comprises a substrate, a buried oxide layer formed over said substrate, a source region formed over said buried oxide layer, a drain region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- and
- altering said design of said integrated circuit so as to increase said capacitance ratio of said integrated circuit.
A method comprising:
- calculating a capacitance ratio of a design for an integrated circuit, wherein said integrated circuit comprises a substrate, a buried layer formed over said substrate, a source region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- altering said design so as to increase said capacitance ratio;
- and
- forming said integrated circuit having said altered design.
1 more element
A method comprising:
- evaluating a first design of an electronic device;
- improving said first design of said electronic device so as to increase a capacitance ratio of said electronic device, said capacitance ratio comprising:
- Cdj/(Cdj+Csj+CBOX),
- wherein Cdj comprises a capacitance of a drain-body junction, Csj comprises a capacitance of a source-body junction and CBOX comprises a capacitance of said buried oxide layer.
1 more element
A method comprising:
- determining a capacitance ratio of a design of an integrated circuit, wherein said integrated circuit comprises a substrate, a buried oxide layer formed over said substrate, a source region formed over said buried oxide layer, a drain region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- altering said design of said integrated circuit so as to increase said capacitance of said integrated circuit;
- and
- forming said integrated circuit having said increased capacitance.
1 more element
A method of forming an electronic device, said method comprising:
- calculating a capacitance ratio of a design for the electronic device, the calculating said capacitance ratio comprises:
- determining a capacitance ratio of a first design of said electronic device, and
- altering said first design of said electronic device so as to increase said capacitance ratio;
- and
- forming said electronic device having said calculated capacitance ratio.
2 more elements
A method of designing an electronic device comprising:
- determining a capacitance ratio of a design of said electronic device, wherein said electronic device comprises a substrate, a buried oxide layer formed over said substrate, a source region formed over said buried oxide layer, a drain region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- and
- altering said design of said electronic device so as to increase said capacitance ratio of said electronic device, the altering comprising increasing a thickness of the buried oxide layer of the electronic device.
A method of designing an electronic device comprising:
- determining a capacitance ratio of a design of said electronic device, wherein said electronic device comprises a substrate, a buried oxide layer formed over said substrate, a source region formed over said buried oxide layer, a drain region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- and
- altering said design of said electronic device so as to increase said capacitance ratio of said electronic device, the altering comprising decreasing a dielectric constant of the buried oxide layer of the electronic device.
A method of designing an electronic device comprising:
- determining a capacitance ratio of a design of said electronic device, wherein said electronic device comprises a substrate, a buried oxide layer formed over said substrate, a source region formed over said buried oxide layer, a drain region formed over said buried oxide layer, and a body region formed over said buried oxide layer such that said body region is in between said source region and said drain region;
- and
- altering said design of said electronic device so as to increase said capacitance ratio of said electronic device, the altering comprising asymmetrically doping the source region and the drain region of the electronic device.
Dependencies are inferred from the claim text.