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US 6,632,683 B2Granted
Method for forming a capacitor of a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKyong Min Kim, Ho-Jung Sun
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Abstract
Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’) and dielectric layer formed of tantalum oxide (Ta2O5) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.
Claims17
A method for forming a capacitor of a semiconductor device, the method comprising:
- (a) forming a lower insulating film having a storage electrode contact hole on a semiconductor substrate;
- (b) forming a contact plug filling the storage electrode contact hole;
- (c) forming a storage electrode electrically connected to the contact plug, wherein the storage electrode is a Ru film formed using a CVD method performed at a temperature ranging from 300 to 400° C.;
- (d) subjecting the surface of the storage electrode to a RTP under nitrogen gas atmosphere;
- (e) forming a dielectric film on the Ru film;
- (f) subjecting the dielectric film to a annealing process;
- and
- (g) forming a plate electrode on the dielectric film.
5 more elements
Dependencies are inferred from the claim text.