Pattern-forming method using photomask, and pattern-forming apparatus
AssigneeCanon Kabushiki Kaisha
InventorsTakako Yamaguchi, Ryo Kuroda
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Abstract
A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light. The method includes the steps of forming a photoresist having a film thickness at most equal to a width of the minute aperture on a substrate to be processed, exposing the photoresist by incident light for exposure, and adjusting the film thickness of the photoresist and the conditions of the exposure so as to prevent a photoresist pattern made by the propagating light from extending to an adjacent pattern made by the evanescent light.
Claims11
A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light, said method comprising the steps of:
- on a suitable substrate to be processed, forming a photoresist film having a thickness of at most equal to a width of the minute aperture;
- exposing the photoresist film by incident light for exposure;
- and
- adjusting the film thickness and at least one of intensity of the incident light and dose of exposure so as to prevent a photoresist pattern formed by the propagating light from extending to an adjacent pattern made by the evanescent light.
Dependencies are inferred from the claim text.