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US 6,632,582 B2Granted
Pattern formation material and pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Kishimura, Masaru Sasago, Mitsuru Ueda
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Abstract
A pattern formation material contains a base polymer including a siloxane compound represented by Chemical Formula 1: wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound.
Claims24
A pattern formation material comprising:
- a base polymer which is a siloxane compound represented by Chemical Formula 1, and
- an acid generator for generating an acid through irradiation with light,
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- at least one R1 of Chemical Formula 1 is an alkyl compound represented by
- wherein R2 is a protecting group released by an acid.
2 more elements
A pattern formation material comprising:
- a base polymer which is a siloxane compound represented by Chemical Formula 1, and
- an acid generator for generating an acid through irradiation with light,
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- at least one R1 of Chemical Formula 1 is an alkyl compound represented by
- wherein R3 are the same or different protecting groups released by an acid.
2 more elements
A pattern formation material comprising:
- a base polymer which is a siloxane compound represented by Chemical Formula 1, and
- an acid generator for generating an acid through irradiation with light,
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- at least one R1 of Chemical Formula 1 is an alkyl compound represented by
- wherein R4 is a protecting group released by an acid.
2 more elements
A pattern formation material comprising:
- a base polymer which is a siloxane compound represented by Chemical Formula 1, and
- an acid generator for generating an acid through irradiation with light,
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- at least one R1 of Chemical Formula 1 is an alkyl compound represented by
- wherein R5 is a protecting group released by an acid.
2 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer which is a silioxane compound represented by Chemical Formula 6:
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
2 more elements
A pattern formation method comprising the steps of:
- forming an organic film from an organic compound on a substrate;
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer which is a silioxane compound represented by Chemical Formula 11:
- wherein R1 are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- forming a resist pattern by developing said resist film after the pattern exposure;
- and
- forming an organic film pattern by conducting dry development using oxygen plasma on said organic film with said resist pattern used as a mask.
4 more elements
Dependencies are inferred from the claim text.