Electrophotographic light-receiving member and process for its production
AssigneeCanon Kabushiki Kaisha
InventorsHiroaki Niino, Satoshi Kojima, Shinji Tsuchida
Life of this patent
Estimating the term…
Abstract
A process for producing an electrophotographic light-receiving member having a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component, hydrogen atoms and/or halogen atoms. The photoconductive layer is formed at a flow rate (X) sccm of n Si supply gas and a discharge space volume (Z) cm3 satisfying (A) and a flow rate (X) sccm of the Si supply gas and density (Y) W/cm3 of the electric power input to the discharge space satisfying the following relation (B) wherein 3×10−3≦X/Z≦1×10−2 (A) and 3×10−4≦Y/X≦7×10−4 (B).
Claims2
A process for producing an electrophotographic light-receiving member comprising a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component and hydrogen atoms and/or halogen atoms, said process comprising:
- vacuum depositing said photoconductive layer in an apparatus which includes a reactor provided with a substrate and a discharge space, a raw material supply device and a RF power source under high frequency plasma vapor deposition (RF-PCVD) conditions in which the flow rate (X) sccm of a Si supply gas and a discharge space volume (Z) cm3 satisfy the following relation (A) and a flow rate (X) sccm of the Si supply gas and density (Y) W/cm3 of the electric power input to the discharge space satisfy the following relation (B)
- 3×10−3≦X/Z≦1×10−2 (A)
- 3×10−4≦Y/X≦7×10−4 (B).
Dependencies are inferred from the claim text.