Magnetic film

A magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed in contact with each other,

• wherein the magnetic layer has a composition represented by (M1α1X1β1)100−δ1A1δ1 (where α1, β1, and δ1 represent % by atomic weight;
• M1 is a least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X1 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Ge, Al, Ga, Cr, IVa group elements, Va group elements and transition metals;
• and A1 is at least one selected from the group consisting of O and N),
• the magnetic layer has the following composition range:
• 0.1≦β1≦12
• α1+β1=100
• 0≦δ1≦10
• the intermediate layer has a composition represented by (M2α2X2β2)100−δ2A2δ2 (where α2, β2, and δ2 represent % by atomic weight, M2 is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X2 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Al, Ga, Ge, Cr, IVa group elements, Va group elements and transition metals;
• and A2 is O),
• the intermediate layer has the following composition range:
• 0.1≦β2≦80
• α2+β2=100
• δ1<δ2≦67.

A magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed in contact with each other,

• wherein the magnetic layer has a composition represented by (M1α1X1β1)100−δ1A1δ1 (where α1, β1, and δ1 represent % by atomic weight;
• M1 is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X1 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Ge, Al, Ga, Cr, IVa group elements, Va group elements and transition metals;
• and A1 is at least one selected from the group consisting of O and N),
• the magnetic layer has the following composition range:
• 0.1≦β1≦12
• α1+β1=100
• 0≦δ1≦10
• the intermediate layer has a composition represented by (M2α2X2β2)100−δ2A2δ2 (where α2, β2, and δ2 represent % by atomic weight, M2 is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X2 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Al, Ga, Ge, Cr, IVa group elements, Va group elements and transition metals;
• and A2 is at least one selected from the group consisting of O and N),
• the intermediate layer has the following composition range:
• 0.1≦β2≦80
• α2+β2=100
• δ1<δ2≦67,
• wherein assuming that an average thickness of the magnetic layer is T1 and an average thickness of the intermediate layer is T2, the following expressions are satisfied:
• 2 nm≦T1≦150 nm
• 0.4 nm≦T2≦15 nm
• 1≦T1/T2≦50.

A magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed,

• wherein the magnetic layer has a composition represented by (M1α1X1β1Z1γ1)100−δ1A1δ1 (where α1, β1, and δ1 represent % by atomic weight;
• M1 is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X1 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Al, Ga, Ge, Cr, IVa group elements, Va group elements and transition metals;
• Z1 is at least one selected from the group consisting of Zn, Rh, Ru, and Pt;
• and A1 is at least one selected from the group consisting of O and N),
• the magnetic layer has the following composition range:
• 0.1≦β1≦12
• 0.1≦γ1≦8
• α1+β1+γ1=100
• 0≦δ1≦10
• the intermediate layer has a composition represented by (M2α2X2β2Z2γ2)100−δ2A2δ2 (where α2, β2, γ2, and δ2 represented by atomic weight, M2 is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X2 is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Al, Ga, Ge, Cr, IVa group elements, Va group elements and transition metals;
• Z2 is at least one selected from the group consisting of Rh, Ru, and Pt;
• and A2 is at least one selected from the group consisting of O and N),
• the intermediate layer has the following composition range:
• 0.1≦β2≦80
• 0.1≦γ2≦80
• α2+β2+γ2=100
• δ1<δ2≦67.

A high-resistant magnetic film having a composition represented by MαXβ(NδOε)γ(where α, β, γ, δ, and ε represent % by atomic weight;

• M is at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X is at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, and Ga),
• wherein assuming that a chemical formula when the X forms a nitride with a lowest nitride generation free energy is (X)Nm and a chemical formula when the X forms an oxide with a lowest oxygen generation free energy is (X)On the high-resistant magnetic film has the following composition range:
• α+β+γ=100
• 45≦α≦78
• δ+ε=100
• 1<100×γ/β/(m×δ+n×ε)<2.5
• the high-resistant magnetic film contains crystal grains, and
• a shortest diameter of each of the crystal grains is 20 nm or less.

A magnetic, multilayer comprising a magnetic thin film and a high-resistant layer alternately formed

• wherein where an average thickness of the magnetic thin film is T3, and an average thickness of the high-resistant layer is T4, the following expressions are satisfied:
• 100 nm≦T3≦1000 nm
• 2 nm≦T4≦50 nm
• 10≦T3/T4≦500
• and wherein the magnetic thin film includes a substantially crystalline magnetic layer and an intermediate layer,
• the magnetic layer, the intermediate layer, and the high-resistant layer have compositions represented by M1X1A1, M2X2A2, and M3X3A3, respectively (where M1 to M3 are at least one magnetic metal selected from the group consisting of Fe, Co, and Ni;
• X1, X2, and X3 are at least one selected from the group consisting of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, and transition metals excluding the magnetic metal;
• and A1, A2, and A3 are at least one selected from the group consisting of O and N), and
• the magnetic layer, the intermediate layer, and the high-resistant layer at least satisfy the conditions:
• M1=M2=M3, and X1=X2=X3.