Chemical-mechanical planarization of metallurgy
AssigneeInternational Business Machines Corporation
InventorsVlasta Brusic, Daniel C. Edelstein, Paul M. Feeney, William Guthrie, Mark Jaso, Frank B. Kaufman, Naftali Lustig, Peter Roper, Kenneth Rodbell, David B. Thompson
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Abstract
Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.
Claims10
A CMP slurry for polishing a layer of copper or a copper alloy integrated circuit metallization on a liner layer, said slurry providing a first removal rate of said copper or copper alloy and a second removal rate of said liner layer, said first removal rate being at least fifty times greater than said second removal rate, comprising an inorganic etachant that promotes copper oxidation, an oxidation inhibitor which reacts with copper to form a passivating layer which retards the oxidation of copper, and at least about 3 ml of sodium octyl sulfate per liter of said slurry that appreciably regulates reaction between copper and said oxidation inhibitor to limit the formation of said passivating layer by competing for adsorption sites on the surface of said copper.
Dependencies are inferred from the claim text.