System for the plasma treatment of large area substrates
AssigneeSilicon Genesis Corporation
InventorChung Chan
Life of this patent
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Abstract
A plasma system for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources removably attached to the rf transparent windows of a processing chamber. The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes, such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.
Claims28
A system for processing a substrate, said system comprising:
- a vacuum chamber in which a plasma is generated;
- a first dielectric window on a surface of said chamber, said dielectric window having a first side and a second side facing outside and inside of said chamber, respectively;
- an rf generator;
- a sensor to monitor a process condition as said substrate is being processed in said chamber and transmit a signal in response to said monitored process condition;
- a controller to receive said signal from said sensor and adjust at least one process parameter;
- and
- a removable plasma source located external to said vacuum chamber, said plasma source electrically coupled to said rf generator and operative to generate a plasma, said plasma source including an antenna provided over said first side of said first dielectric window, said antenna having a plurality of spiral portions extending in a substantially orthogonal direction from said dielectric window.
A system for processing a substrate, comprising:
- a vacuum chamber in which a plasma is generated;
- a first dielectric window on a surface of said chamber, said first dielectric window having a first side and a second side facing outside and inside of said chamber, respectively;
- a second dielectric window configured as a viewing port;
- an rf generator;
- a control system to monitor and adjust a process condition within said chamber;
- and
- a plasma source located external to said vacuum chamber, said plasma source electrically coupled to said rf generator and operative to generate a plasma, said plasma source including a vertically-extending, removable antenna provided over said first side of said first dielectric window and a shield having an opening that faces said first side of said first dielectric window, said shield cooperating with said first side of said first dielectric window to enclose said antenna, said vertically extending antenna having first, second, and third spiral portions;
- and
- a gas feed tube extending through said antenna and having a first extending portion proximate to said first dielectric window and a second extending portion remote from said first dielectric window,
- wherein said first spiral portion wraps around said first extending portion of said feed tube and said second spiral portion wraps around said second extending portion, and
- wherein said antenna and shield are removably attached to said dielectric window.
Dependencies are inferred from the claim text.