Selective treatment of microelectronic workpiece surfaces

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with metal ions, comprising:

• (a) placing the semiconductor workpiece in a reaction chamber;
• (b) supplying a first fluid to the chamber to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• (c) wherein the first fluid is supplied for a sufficient time period to remove at least a portion of the contaminant metal ions from the back side of the workpiece and said first fluid comprises an aqueous etchant solution comprised of an acid selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant metal ions from the back side of the workpiece;
• (d) supplying a second fluid to the chamber to expose the front side to the second fluid;
• and
• (e) wherein the reaction chamber comprises a first chamber portion and a second chamber portion that are defined by separable first and second reactor members that cooperatively support the workpiece.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with metal ions, comprising:

• (a) placing the workpiece in a reaction chamber that includes a first chamber portion that receives the back side and including a first fluid inlet and a second chamber portion receiving the front side and including a second fluid inlet;
• (b) supplying a first fluid to the first chamber portion to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• and
• (c) wherein the first fluid is supplied for a sufficient time period to remove at least a portion of the contaminant metal ions from the back side of the workpiece and said first fluid comprises an aqueous etchant solution which comprises an acid selected and supplied at a concentration level sufficient to remove the contaminant metal ions from the back side of the workpiece.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with metal ions, comprising:

• (a) placing the workpiece in a reaction chamber that includes a first chamber portion that receives the back side and including a first fluid inlet and a second chamber portion receiving the front side and including a second fluid inlet;
• (b) supplying a first fluid to the first chamber portion to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• (c) wherein the first fluid is supplied for a sufficient time period to remove at least a portion of the contaminant metal ions from the back side of the workpiece and said first fluid comprises an aqueous etchant solution which comprises an acid selected and supplied at a concentration level sufficient to remove the contaminant metal ions from the back side of the workpiece;
• and
• (d) wherein the first chamber portion and the second chamber portion are defined by separable first and second reactor members that cooperatively support the workpiece.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with copper ions, comprising:

• (a) placing the semiconductor workpiece in a reaction chamber that includes a first chamber portion that receives the back side of the workpiece and a second chamber portion that receives the front side of the workpiece;
• (b) supplying a first fluid to the first chamber portion to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• (c) wherein the first fluid is supplied for a sufficient time period and comprises an aqueous etchant solution which comprises an acid selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant copper ions from the back side of the workpiece;
• and
• (d) supplying a second fluid to the second chamber portion to expose the front side to the second fluid.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with copper ions, comprising:

• (a) placing the workpiece in a reaction chamber that includes a first chamber portion that receives the back side and including a first fluid inlet and a second chamber portion receiving the front side and including a second fluid inlet;
• (b) supplying a first fluid to the first chamber portion to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• and
• (c) wherein the first fluid is supplied for a sufficient time period and comprises an aqueous etchant solution which comprises an acid selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant copper ions from the back side of the workpiece.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with metal ions, comprising:

• (a) placing the semiconductor workpiece in a reaction chamber;
• (b) supplying a first fluid to the chamber to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• (c) wherein the first fluid is supplied for a sufficient time period to remove at least a portion of the contaminant metal ions from the back side of the workpiece and said first fluid comprises an aqueous etchant solution comprised of:
• (a1) an acid, selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant metal ions from the back side of the workpiece, and
• (b1) an oxidizing agent;
• and
• (d) supplying a second fluid to the chamber to expose the front side to the second fluid.

A process for treating a semiconductor workpiece having a front side on which a plurality of metallized devices are formed, an opposing back side and a peripheral edge defined between the front and back sides, the back side and/or peripheral edge being contaminated with copper ions, comprising:

• (a) placing the workpiece in a reaction chamber that includes a first chamber portion that receives the back side and including a first fluid inlet and a second chamber portion receiving the front side and including a second fluid inlet;
• (b) supplying a first fluid to the first chamber portion to expose the back side to the first fluid while excluding at least a major portion of the front side from exposure to the first fluid;
• (c) wherein the first fluid is supplied for a sufficient time period and comprises an aqueous etchant solution which comprises an acid selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant copper ions from the back side of the workpiece;
• and
• (d) wherein the etchant comprises:
• (a1) an acid, selected and supplied at a concentration level sufficient to remove at least a portion of the contaminant copper ions from the back side of the workpiece, and
• (b1) an oxidizing agent.