Method of making a seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorMustafa Pinarbasi
Life of this patent
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Abstract
A bottom spin valve sensor employs a seed layer for a nickel oxide (NiO) antiferromagnetic pinning layer for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve or an antiparallel (AP) spin valve sensor. In the preferred embodiment the seed layer is tantalum oxide TayOx or copper (Cu).
Claims11
A method of making a spin valve sensor comprising the steps of:
- forming a seed layer of copper;
- forming an antiferromagnetic pinning layer of nickel oxide (NiO) directly on the seed layer;
- forming a ferromagnetic pinned layer directly on the pinning layer;
- forming a nonmagnetic electrically conductive spacer layer on the pinned layer;
- forming a ferromagnetic free layer on the spacer layer.
A method of making a spin valve sensor comprising the steps of:
- forming a seed layer of tantalum oxide (TayOx);
- forming an antiferromagnetic pinning layer of nickel oxide (NiO) directly on the seed layer;
- forming a ferromagnetic pinned layer directly on the pinning layer;
- forming a nonmagnetic electrically conductive spacer layer on the pinned layer;
- and
- forming a ferromagnetic free layer on the spacer layer.
A method of making a spin valve sensor comprising the steps of:
- forming a seed layer of tantalum oxide;
- forming an antiferromagnetic pinning layer of nickel oxide (NiO) directly on the seed layer;
- forming a ferromagnetic pinned layer directly on the pinning layer;
- forming a nonmagnetic electrically conductive spacer layer on the pinned layer;
- forming a ferromagnetic free layer on the spacer layer;
- the pinned layer being an antiparallel (AP) pinned layer which is made comprising the steps of:
- forming a first ferromagnetic film;
- forming a ruthenium (Ru) spacer film on the first ferromagnetic film;
- and
- forming a second ferromagnetic film on the ruthenium (Ru) film;
- and
- the seed layer being reactive ion beam sputtered tantalum (Ta) in the presence of oxygen (O2).
A method of making a spin valve sensor comprising the steps of:
- forming a seed layer of tantalum oxide;
- forming an antiferromagnetic pinning layer of nickel oxide (NiO) directly on the seed layer;
- forming a ferromagnetic pinned layer directly on the pinning layer;
- forming a nonmagnetic electrically conductive spacer layer on the pinned layer;
- forming a ferromagnetic free layer on the spacer layer;
- the pinned layer being an antiparallel (AP) pinned layer which is made comprising the steps of:
- forming a first ferromagnetic film;
- forming a ruthenium (Ru) spacer film on the first ferromagnetic film;
- and
- forming a second ferromagnetic film on the ruthenium (Ru) film;
- and
- the seed layer being sputtered tantalum (Ta) which is subsequently exposed to oxygen (O2).
A method of making a magnetic head that has an air bearing surface (ABS) comprising the steps of:
- forming a read head that includes:
- forming a ferromagnetic first shield layer;
- forming a nonmagnetic electrically insulative first gap layer on the first shield layer;
- forming a spin valve sensor on the first gap layer as follows:
- forming a seed layer of tantalum oxide or copper on the first gap layer;
- forming an antiferromagnetic pinning layer of nickel oxide (NiO) directly on the seed layer;
- forming a ferromagnetic pinned layer directly on the pinning layer;
- forming a nonmagnetic electrically conductive spacer layer on the pinned layer;
- and
- forming a ferromagnetic free layer on the spacer layer;
- said forming of the read head further including:
- forming a nonmagnetic electrically insulative second gap layer on the sensor and the first gap layer;
- and
- forming a ferromagnetic second shield layer on the second gap layer.
Dependencies are inferred from the claim text.