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US 6,631,540 B2Granted
Method of forming a low inductance high capacitance capacitor
AssigneeIntel Corporation
InventorLarry E. Mosley
Life of this patent
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Abstract
A method of forming a capacitor with low inductance connection terminals, comprising a first surface including a first electrode of porous metal, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, attaching a plurality of electrically coupled connection terminals to the first electrode on the first surface and attaching a plurality of electrically coupled connection terminals to the second electrode on the first surface.
Claims12
A method of forming a capacitor, comprising:
- forming a porous tantalum (Ta) block as a first electrode of the capacitor;
- attaching a first plurality of terminals to a surface of the Ta block;
- masking a portion of the first plurality of terminals, thus forming masked and unmasked portions of the first plurality of terminals;
- oxidizing both the surface of the Ta block and the unmasked portions of the first plurality of, to form an oxidized Ta surface and oxidized terminal portions;
- removing the masks from the first plurality of terminals;
- masking the oxidized terminal portions of the first plurality of terminals;
- forming a second electrode on the oxidized Ta surface of the Ta block, the oxidized portion of the first plurality of terminals being protected by masks;
- and
- attaching a second plurality of terminals to the second electrode,
- wherein the capacitor has two major surfaces and the first and second plurality of terminals are co-located on the same major surface of the capacitor.
7 more elements
A method, comprising:
- forming a porous tantalum (Ta) plate having first and second surfaces;
- attaching a first terminal to the first surface of the Ta plate;
- forming a first mask on a central portion of the first terminal, thus forming a masked central terminal portion and an unmasked, annular, outer terminal portion;
- oxidizing both the first surface of the Ta plate and the unmasked, annular, outer terminal portion, but not oxidizing the second surface of the Ta plate, causing the first surface of the Ta plate to be an oxidized Ta layer and the second surface of the Ta plate to be a Ta layer, the Ta layer to be a first electrode of a capacitor, and also causing the unmasked, annular, outer terminal portion to be an oxidized, annular, outer terminal portion surrounding a masked, unoxidized, central terminal portion;
- removing the first mask from the unoxidized, central terminal portion;
- forming a second mask on the oxidized, annular, outer terminal portion;
- forming an electrically conductive layer on the oxidized Ta layer, the second mask preventing the formation of the electrically conductive layer on the oxidized, annular, outer terminal portion, the electrically conductive layer to be a second electrode of the capacitor, the oxidized Ta layer to provide dielectric insulation between the first and second electrodes, the unoxidized, central terminal portion to provide a direct electrical connection through the oxidized Ta layer to the first electrode, and the oxidized, annular, outer terminal portion to electrically isolate the unoxidized, central terminal portion from the second electrode;
- and
- attaching a second terminal to the electrically conductive layer so that both the first and second terminals are co-located on one surface of the capacitor corresponding to the second electrode, the unoxidized, central terminal portion of the first terminal being formed directly through the capacitor and made accessible from the same side of the capacitor as is the second terminal, thus allowing electrical connection to both the first and second electrodes from the same side of the capacitor.
6 more elements
Dependencies are inferred from the claim text.