Plasma reactor having an inductive antenna coupling power through a parallel plate electrode

A plasma reactor for processing a workpiece, said reactor comprising:

• a reactor enclosure defining a chamber;
• a base within said chamber for supporting said workpiece;
• a semiconductor window electrode overlying said base;
• and
• an inductive antenna adjacent a side of said semiconductor window electrode opposite said base;
• wherein said inductive antenna is outside of said chamber;
• and
• wherein said semiconductor window forms a portion of said reactor enclosure.

A plasma reactor for processing a planar substrate, said reactor comprising:

• a reactor enclosure defining a processing chamber;
• a base within said chamber for supporting said planar substrate during processing thereof;
• a semiconductor window electrode overlying said base;
• a gas inlet system comprising a set of gas inlet ports through said semiconductor window electrode over said planar substrate for admitting a plasma precursor gas into the portion of said chamber overlying said planar substrate;
• an inductive antenna overlying said semiconductor window for coupling power into the interior of said chamber through said semiconductor window, said inductive antenna comprising:
• (a) an inner antenna portion overlying a center of said planar substrate, and
• (b) an outer antenna portion overlying a periphery of said planar substrate and electrically separated from said inner antenna portion so as to be separately controllable.

A plasma reactor for processing a planar substrate, said reactor comprising:

• a reactor enclosure defining a processing chamber;
• a base within said chamber for supporting said planar substrate during processing thereof;
• a semiconductor window overlying said base, said semiconductor window comprising:
• (a) an inner window portion overlying a center of said planar substrate, and
• (b) an outer window portion overlying a periphery of said planar substrate and electrically separated from said inner window portion so as to be separately controllable;
• a gas inlet system comprising a set of gas inlet ports through said semiconductor window electrode over said planar substrate for admitting a plasma precursor gas into the portion of said chamber overlying said planar substrate;
• an inductive antenna overlying said semiconductor window for coupling power into the interior of said chamber through said semiconductor window.

An RF plasma reactor chamber for processing a semiconductor wafer and comprising:

• an all non-metallic enclosure for confining a plasma within a processing region overlying said wafer;
• plural gas inlets through said enclosure;
• wherein said plural inlets are independently controllable and proximal different radial locations of said workpiece for independently affecting plasma conditions over different radial locations of said workpiece;
• and
• an inductive antenna wherein said inductive antenna comprises electrically separate sub-antenna portions proximal different respective radial locations of said workpiece.