Formation of boride barrier layers using chemisorption techniques
AssigneeApplied Materials, Inc.
InventorsJeong Soo Byun, Alfred Mak
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Abstract
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
Claims4
A method of forming a barrier layer structure for use in integrated circuit fabrication, comprising:
- positioning a substrate having an oxide layer thereon, wherein the oxide layer has apertures formed therein to a top surface of the substrate;
- forming a first boride layer comprising two or more refractory metals on at least a portion of the oxide layer and the substrate surface by chemisorbing monolayers of a boron containing compound and one or more refractory metal compounds on the substrate;
- and
- forming a second boride layer comprising one or more refractory metals on the first boride layer by chemisorbing monolayers of a boron containing compound and one or more refractory metal compounds on the substrate.
Dependencies are inferred from the claim text.