MOSFET modeling for IC design accurate for high frequencies
AssigneeCadence Design Systems, Inc.
InventorsXisheng Zhang, Hancheng Liang, Zhihong Liu, Jianhe Guo
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Abstract
The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.
Claims38
A method of providing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, comprising:
- receiving data characterizing the response of the non-linear device, wherein said data includes the DC response high frequency response characteristics of the non-linear device;
- constructing a sub-circuit to represent the non-linear device, said sub-circuit having one or more adjustable parameters;
- setting one or more of said adjustable parameters based upon the DC response characteristics;
- adjusting, based upon the high frequency response characteristics, the adjustable parameters set based upon the DC response characteristics;
- and
- subsequent to said adjusting, simultaneously optimizing a plurality of the subcircuit's characterizations of the device with respect to the data by adjusting at least one of the parameters, wherein the characterizations include a DC characterization and a high frequency characterization.
A method of providing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, comprising:
- receiving data characterizing the response of the non-linear device;
- constructing a sub-circuit to represent the non-linear device, said sub-circuit having one or more adjustable parameters;
- simultaneously optimizing a plurality of the subcircuit's characterizations of the device with respect to the data by adjusting at least one of the parameters, wherein the characterizations include a DC characterization, a high frequency characterization and a noise characterization.
A method of constructing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, comprising:
- selecting a simulation model having one or more internal parameters for modelling the non-linear device;
- receiving response characteristics of the non-linear device, said response characteristics including DC and high frequency device response characteristics;
- replacing the non-linear device with a subcircuit comprising:
- a plurality of external elements each having one or more parameters;
- and
- the non-linear device, wherein at least one of the internal parameters of the non-linear device within the subcircuit have been adjusted to compensate for the introduction of the external elements;
- setting the internal parameters of the non-linear device and sub-circuit external element parameters based upon the DC response characteristics;
- and
- adjusting, based upon the high frequency response characteristics, the internal parameters of the non-linear device and sub-circuit external element parameters previously set based upon the DC response characteristics.
A computer readable storage device embodying a program of instructions executable by a computer to perform a method of providing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, said method comprising:
- receiving data characterizing the response of the non-linear device, wherein said data includes the DC response high frequency response characteristics of the non-linear device;
- constructing a sub-circuit to represent the non-linear device, said sub-circuit having one or more adjustable parameters;
- setting one or more of said adjustable parameters based upon the DC response characteristics;
- adjusting, based upon the high frequency response characteristics, the adjustable parameters set based upon the DC response characteristics;
- and
- subsequent to said adjusting, simultaneously optimizing a plurality of the subcircuit's characterizations of the device with respect to the data by adjusting at least one of the parameters, wherein the characterizations include a DC characterization and a high frequency characterization.
A method for transmitting a program of instructions executable by a computer to perform a process of providing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, said method comprising:
- transmitting to a user a program of instructions;
- and
- enabling the user device to perform, by means of such program, the following process:
- receiving data characterizing the response of the non-linear device, wherein said data includes the DC response high frequency response characteristics of the non-linear device;
- constructing a sub-circuit to represent the non-linear device, said sub-circuit having one or more adjustable parameters;
- setting one or more of said adjustable parameters based upon the DC response characteristics;
- adjusting, based upon the high frequency response characteristics, the adjustable parameters set based upon the DC response characteristics;
- and
- subsequent to said adjusting, simultaneously optimizing a plurality of the subcircuit's characterizations of the device with respect to the data by adjusting at least one of the parameters, wherein the characterizations include a DC characterization and a high frequency characterization.
A computer readable storage device embodying a program of instructions executable by a computer to perform a method of constructing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, said method comprising:
- selecting a simulation model having one or more internal parameters for modelling the non-linear device;
- receiving response characteristics of the non-linear device, said response characteristics including DC and high frequency device response characteristics;
- replacing the non-linear device with a subcircuit comprising:
- a plurality of external elements each having one or more parameters;
- and
- the non-linear device, wherein at least one of the internal parameters of the non-linear device within the subcircuit have been adjusted to compensate for the introduction of the external elements;
- setting the internal parameters of the non-linear device and sub-circuit external element parameters based upon the DC response characteristics;
- and
- adjusting, based upon the high frequency response characteristics, the internal parameters of the non-linear device and sub-circuit external element parameters previously set based upon the DC response characteristics.
A method for transmitting a program of instructions executable by a computer to perform a process of constructing a sub-circuit representation of a non-linear device in a MOS circuit for use in simulating the operation of the circuit, said method comprising:
- transmitting to a user a program of instructions;
- and
- enabling the user device to perform, by means of such program, the following process:
- selecting a simulation model having one or more internal parameters for modelling the non-linear device;
- receiving response characteristics of the non-linear device, said response characteristics including DC and high frequency device response characteristics;
- replacing the non-linear device with a subcircuit comprising:
- a plurality of external elements each having one or more parameters;
- and
- the non-linear device, wherein at least one of the internal parameters of the non-linear device within the subcircuit have been adjusted to compensate for the introduction of the external elements;
- setting the internal parameters of the non-linear device and sub-circuit external element parameters based upon the DC response characteristics;
- and
- adjusting, based upon the high frequency response characteristics, the internal parameters of the non-linear device and sub-circuit external element parameters previously set based upon the DC response characteristics.
Dependencies are inferred from the claim text.