Method for scaling processes between different etching chambers and wafer sizes

A method for scaling plasma process settings from a first processing device having a first geometry and a first set of process parameters, to a second processing device having a second geometry and a second set of process parameters, the method comprising:

• determining a first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry;
• reducing said first set of plasma process settings to isolate at least one variable on which said first set of plasma process settings depends for each plasma process setting;
• calculating a scaling factor for each plasma process setting from said reduced first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters;
• and
• determining a second set of process settings for the second processing device having the second geometry by multiplying said scaling factor with each plasma process setting from the first processing device having the first geometry,
• wherein said first geometry further comprises a chamber radius, a chamber height, a chamber aspect ratio, a chamber cross-sectional area, and a wafer area.

A method for scaling plasma process settings from a first processing device having a first geometry and a first set of process parameters, to a second processing device having a second geometry and a second set of process parameters, the method comprising:

• determining a first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry;
• reducing said first set of plasma process settings to isolate at least one variable on which said first set of plasma process settings depends for each plasma process setting;
• calculating a scaling factor for each plasma process setting from said reduced first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters;
• and
• determining a second set of process settings for the second processing device having the second geometry by multiplying said scaling factor with each plasma process setting from the first processing device having the first geometry,
• wherein said second geometry further comprises a chamber radius, a chamber height, a chamber aspect ratio, a chamber cross-sectional area, and a wafer area.

A method for scaling plasma process settings from a first processing device having a first geometry and a first set of process parameters, to a second processing device having a second geometry and a second set of process parameters, the method comprising:

• determining a first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry;
• reducing said first set of plasma process settings to isolate at least one variable on which said first set of plasma process settings depends for each plasma process setting;
• calculating a scaling factor for each plasma process setting from said reduced first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters;
• and
• determining a second set of process settings for the second processing device having the second geometry by multiplying said scaling factor with each plasma process setting from the first processing device having the first geometry,
• wherein said first set of process parameters further comprises an ion flux, a radical flux, an etch production flux, an electron temperature, an average ion energy, and a uniformity.

A method for scaling plasma process settings from a first processing device having a first geometry and a first set of process parameters, to a second processing device having a second geometry and a second set of process parameters, the method comprising:

• determining a first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry;
• reducing said first set of plasma process settings to isolate at least one variable on which said first set of plasma process settings depends for each plasma process setting;
• calculating a scaling factor for each plasma process setting from said reduced first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters;
• and
• determining a second set of process settings for the second processing device having the second geometry by multiplying said scaling factor with each plasma process setting from the first processing device having the first geometry,
• wherein said second set of process parameters further comprises an ion flux, a radical flux, an etch production flux, an electron temperature, an average ion energy, and a uniformity.

A method for scaling plasma process settings from a first processing device having a first geometry and a first set of process parameters, to a second processing device having a second geometry and a second set of process parameters, the method comprising:

• determining a first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry;
• reducing said first set of plasma process settings to isolate at least one variable on which said first set of plasma process settings depends for each plasma process setting;
• calculating a scaling factor for each plasma process setting from said reduced first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters;
• and
• determining a second set of process settings for the second processing device having the second geometry by multiplying said scaling factor with each plasma process setting from the first processing device having the first geometry,
• wherein said reducing further comprises:
• assuming non-local plasma generation;
• determining an electron temperature using an ion mass balance equation;
• determining an ion flux using an input power balance equation;
• determining a radical flux using a free radical production equation;
• determining a residence time using a residence time equation;
• and
• determining a bottom power using a bias power balance equation.