Semiconductor laser
AssigneeNEC Electronics Corporation
InventorHiroyuki Yamazaki
Life of this patent
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Abstract
A seminconductor laser having at least a cavity, wherein the cacvity satisfies the following equations: L=A+B×ln(1/Rf) where A and B are first and second constants, and L is a length of the cavity, and Rf is a reflectance factor of a front facet of the cavity.
Claims29
A semiconductor laser having at least a cavity, wherein said cavity satisfies the following equation:
- L=A+B×ln(1/Rf)
- where A and B are first and second constants, and L is a length of said cavity, and Rf is a reflectance factor of a front facet of said cavity.
A semiconductor laser having at least a cavity, wherein said cavity satisfies the following equation:
- αm=(½L)×ln[1/(Rf×Rr)]
- where αm is the mirror loss of said cavity, L is the length of said cavity, Rf is the reflectance factor of a front facet of said cavity, and said Rr is a reflectance factor of a rear facet of said cavity,
- wherein said mirror loss of said cavity is not more than 13 cm−1, and said reflectance factor of said rear facet of said cavity is not less than 90%, and
- wherein said length of said cavity is not less than 3.6 millimeters, and said reflectance factor of said front facet of said cavity is not more than 0.01%.
A semiconductor laser having at least a cavity, wherein said cavity satisfies the following equation:
- αm=(½L)×ln[1/(Rf×Rr)]
- where αm is the mirror loss of said cavity, L is the length of said cavity, Rf is the reflectance factor of a front facet of said cavity, and said Rr is a reflectance factor of a rear facet of said cavity,
- wherein said cavity has a width in the range of 1 micrometer to 10 micrometers.
A semiconductor laser having at least a cavity wherein a length of said cavity is not less than 3.6 millimeters, and a reflectance factor of a front facet of said cavity is not more than 0.01%.
A semiconductor laser having at least a cavity, wherein a length of said cavity is not less than 1.5 millimeters, and a reflectance factor of a front facet of said cavity is not more than 2%,
- wherein said cavity has a width in the range of 1 micrometer to 10 micrometers.
A method of designing a cavity of a semiconductor device, wherein the following equation is satisfied:
- L=A+B×ln(1/Rf)
- where A and B are first and second constants, and L is a length of said cavity, and Rf is a reflectance factor of a front facet of said cavity.
A method of designing a cavity of a semiconductor device, wherein said cavity satisfies the following equation:
- αm=(½L)×ln[1/(Rf×Rr)]
- where αm is the mirror loss of said cavity, L is the length of said cavity, Rf is the reflectance factor of a front facet of said cavity, and said Rr is a reflectance factor of a rear facet of said cavity,
- wherein said mirror loss of said cavity is not more than 13 cm−1, and said reflectance factor of said rear facet of said cavity is not less than 90%, and
- wherein said length of said cavity is not less than 3.6 millimeters, and said reflectance factor of said front facet of said cavity is not more than 0.01%.
A method of designing a cavity of a semiconductor device, wherein said cavity satisfies the following equation:
- αm=(½L)×ln[1/(Rf×Rr)]
- where αm is the mirror loss of said cavity, L is the length of said cavity, Rf is the reflectance factor of a front facet of said cavity, and said Rr is a reflectance factor of a rear facet of said cavity,
- wherein said cavity has a width in the range of 1 micrometer to 10 micrometers.
A method of designing a cavity of a semiconductor device, wherein a length of said cavity is not less than 3.6 millimeters, and a reflectance factor of said front facet of said cavity is not more than 0.01%.
A method of designing a cavity of a semiconductor device, wherein a length of said cavity is not less than 1.5 millimeters, and a reflectance factor of a front facet of said cavity is not more than 2%, and
- wherein said cavity has a width in the range of 1 micrometer to 10 micrometers.
Dependencies are inferred from the claim text.