Back to results
US 6,618,418 B2Granted
Dual III-V nitride laser structure with reduced thermal cross-talk
AssigneeXerox Corporation
InventorsJohn E. Northrup, Michael A. Kneissl
Life of this patent
Estimating the term…
Abstract
A dual III-V nitride laser structure has a thick current spreading layer on a sapphire substrate and a trench extending into the current spreading layer to reduce thermal cross-talk between the dual lasers.
Claims21
A dual semiconductor laser structure comprising:
- a substrate;
- a III-V nitride semiconductor current spreading layer having a thickness of at least 5 microns formed on said substrate;
- a plurality of III-V nitride semiconductor layers formed on said current spreading layer such that at least one of said plurality of III-V nitride semiconductor layers forms an active layer;
- a trench extending through said plurality of III-V nitride semiconductor layers and partially extending through said current spreading layer, said trench forming a first laser and a second laser from said plurality of III-V nitride semiconductor layers;
- wherein a sufficient forward bias can be applied to said first laser such that stimulated emission is caused to occur therein, wherein a sufficient forward bias can be applied to said second laser such that stimulated emission is caused to occur therein and wherein the depth of said trench and the thickness of said current spreading layer reduce thermal cross-talk between said first laser and second laser.
2 more elements
A dual semiconductor laser structure comprising:
- a III-V nitride semiconductor current spreading layer having a thickness of at least 5 microns;
- a plurality of III-V nitride semiconductor layers formed on said current spreading layer such that at least one of said plurality of III-V nitride semiconductor layers forms an active layer;
- a trench extending through said plurality of III-V nitride semiconductor layers and partially extending through said current spreading layer, said trench forming a first laser and a second laser from said plurality of III-V nitride semiconductor layers;
- wherein a sufficient forward bias can be applied to said first laser such that stimulated emission is caused to occur therein, wherein a sufficient forward bias can be applied to said second laser such that stimulated emission is caused to occur therein;
- and wherein the depth of said trench and the thickness of said current spreading layer reduce thermal cross-talk between said first laser and said second laser.
2 more elements
Dependencies are inferred from the claim text.