Semiconductor laser device and fabricating method thereof
AssigneeSharp Kabushiki Kaisha
InventorsYoshinori Ohitsu, Keisuke Miyazaki, Yoshihisa Fujii
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Abstract
Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3×1017 cm−3 to 2×1018 cm−3.
Claims2
A semiconductor laser device comprising:
- an n-type first cladding layer, an active layer, and a p-type second cladding layer stacked on or above an n-type semiconductor substrate, wherein the second cladding layer comprises carbon as a p-type impurity at a concentration of 2×1017 cm−3 to 2×1018 cm−3;
- wherein an n-type current block layer having a stripe-shaped groove is provided on or above the second cladding layer, at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped groove, and the carbon concentration of the second cladding layer is 3×1017 cm−3 to 2×1018 cm−3;
- and
- wherein the impurity concentration of the second cladding layer is higher in a region of the second cladding layer that faces the groove than in remaining regions of the second cladding layer.
A semiconductor laser device comprising:
- an n-type first cladding layer, an active layer, and a p-type second cladding layer stacked above an n-type semiconductor substrate, wherein the second cladding layer comprises carbon as a p-type impurity at a concentration of 2×1017 cm−3 to 2×1018 cm−3;
- wherein an n-type current block layer having a stripe-shaped groove is provided on or above the second cladding layer;
- and
- wherein the impurity concentration of the second cladding layer is higher in a region of the second cladding layer that faces the groove than in remaining regions of the second cladding layer.
Dependencies are inferred from the claim text.