Hybrid vertical cavity laser with buried interface
AssigneeOptical Communication Products, Inc.
InventorsJohn Wasserbauer, Leo M. F. Chirovsky
Life of this patent
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Abstract
A vertical cavity laser includes an optical cavity adjacent to a first mirror, the optical cavity having a semiconductor portion and a dielectric spacer layer. A dielectric DBR is deposited adjacent to the dielectric spacer layer. The interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is advantageously located at or near a null in the optical standing wave intensity pattern of the vertical cavity laser to reduce the losses or scattering associated with that interface.
Claims30
A vertical cavity laser, comprising:
- a first mirror;
- an optical cavity having a dielectric spacer layer portion and a semiconductor portion, the semiconductor portion adjacent to the first mirror;
- and
- a dielectric DBR adjacent to the dielectric spacer layer, wherein an interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is at or near a null in the optical standing wave intensity pattern of said vertical cavity laser.
A vertical cavity laser, comprising:
- a semiconductor optical cavity adjacent to a first mirror;
- and
- a hybrid mirror, comprising a plurality of semiconductor mirror layers adjacent to said optical cavity, a dielectric spacer layer adjacent to said semiconductor mirror layers and a plurality of dielectric mirror layers adjacent to said dielectric spacer layer, wherein the interface between the semiconductor mirror layers and the dielectric spacer layer is at or near a null in optical standing wave intensity pattern of said vertical cavity laser.
A method for forming a vertical cavity laser, comprising the steps of:
- forming an optical cavity adjacent to a first mirror, the optical cavity comprising a semiconductor portion and a dielectric spacer layer;
- and
- forming a dielectric DBR adjacent to said dielectric spacer layer, wherein interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is at a null in the optical standing wave intensity pattern of the vertical cavity laser.
An optical subassembly comprising:
- an electrical package containing a VCSEL having an optical cavity adjacent to a first mirror, the optical cavity comprising a semiconductor portion and a dielectric spacer layer, and a dielectric DBR adjacent to said dielectric spacer layer, wherein an interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is at or near a null in the optical standing wave intensity pattern of said vertical cavity laser;
- and
- a housing attached to the electrical package, the housing including a ferule for aligning a fiber with an optical path carrying light from the VCSEL.
Dependencies are inferred from the claim text.