Optoelectronic semiconductor component

An optoelectronic component, comprising:

• a semiconductor substrate;
• and
• at least one semiconductor body suitable for generating electromagnetic radiation disposed above said semiconductor substrate, said at least one semiconductor body, including:
• at least one first mirror layer formed of a semiconductor material of a first conductivity type;
• at least one second mirror layer formed of said semiconductor material of said first conductivity type;
• at least one active zone in which the electromagnetic radiation is generated in an event of a current flow flowing through said at least one semiconductor body, said at least one active zone disposed between said at least one first mirror layer and said at least one second mirror layer;
• at least one first heavily doped, degenerate junction layer of said first conductivity type disposed between said at least one active zone and one of said at least one first mirror layer and said at least one second mirror layer;
• and
• at least one second heavily doped, degenerate junction layer of a second conductivity type disposed between said least one active zone and said first heavily doped, degenerate junction layer.